TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Source 33 V = 4.5V 4 3. Drain GS 20 40 V = 2.5V 3.2 GS 100 V = 1.8V 2.0 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM2310CX RF SOT-23 3Kpcs / 7 Reel N-Channel MOSFET o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current, V 4.5V I 4 A GS D Pulsed Drain Current, V 4.5V I 15 A GS DM a,b Continuous Source Current (Diode Conduction) I 1.0 A S o Ta = 25 C 1.25 Maximum Power Dissipation P W D o Ta = 75 C 0.8 o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit o C/W Junction to Case Thermal Resistance R 75 JF o Junction to Ambient Thermal Resistance (PCB mounted) R 160 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. 1/6 Version: B09 TSM2310 20V N-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 0.6 0.8 1.2 V DS GS D GS(TH) Gate Body Leakage V = 4.5V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 16V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V 10V, V = 4.5V I 15 -- -- A DS GS D(ON) V = 4.5V, I = 4A -- 24 30 GS D Drain-Source On-State Resistance V = 2.5V, I = 3.2A R -- 32 40 m DS(ON) GS D V = 1.8V, I = 2A -- 80 100 GS D Forward Transconductance V = 15V, I = 4A g -- 40 -- S DS D fs Diode Forward Voltage I = 1.6A, V = 0V V -- 0.8 1.2 V S GS SD b Dynamic Total Gate Charge Q -- 8.6 -- g V = 10V, I = 4A, DS D nC Gate-Source Charge Q -- 2 -- gs V = 4.5V GS Gate-Drain Charge Q -- 2.7 -- gd Input Capacitance C -- 550 -- iss V = 10V, V = 0V, DS GS pF Output Capacitance C -- 100 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 30 -- rss c Switching Turn-On Delay Time t -- 15 -- d(on) V = 10V, R = 10, DD L Turn-On Rise Time t -- 20 -- r I = 1A, V = 4.5V, nS D GEN Turn-Off Delay Time t -- 40 -- d(off) R = 6 G Turn-Off Fall Time t -- 8 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: B09