X-On Electronics has gained recognition as a prominent supplier of BBS3002-DL-1E MOSFET across the USA, India, Europe, Australia, and various other global locations. BBS3002-DL-1E MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BBS3002-DL-1E ON Semiconductor

BBS3002-DL-1E electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.BBS3002-DL-1E
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET NCH 4V DRIVE SERIES
Datasheet: BBS3002-DL-1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

131: USD 2.4262 ea
Line Total: USD 317.83

Availability - 0
MOQ: 131  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 800
Multiples : 800
800 : USD 2.6454
8000 : USD 2.5346
80000 : USD 2.4838

0
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 800
Multiples : 800
800 : USD 3.5564

0
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 5.6745

0
Ship by Mon. 05 Aug to Fri. 09 Aug

Multiples : 1

0
Ship by Mon. 05 Aug to Fri. 09 Aug
MOQ : 131
Multiples : 1
131 : USD 2.4262

0
Ship by Mon. 12 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 4.4578
10 : USD 3.9533
30 : USD 3.6532
100 : USD 3.3495
500 : USD 3.2107
800 : USD 3.1468

0
Ship by Fri. 09 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 7.4189
10 : USD 4.826
25 : USD 4.6603
100 : USD 3.9871
250 : USD 3.8628
500 : USD 3.4072
800 : USD 3.2311
2400 : USD 3.0965
4800 : USD 2.9308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BBS3002-DL-1E from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BBS3002-DL-1E and other electronic components in the MOSFET category and beyond.

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Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET Coss Crss t (off) d Tc=75C --25C Ciss 25C t f BBS3002 I -- V I -- V D DS D GS --200 --200 Tc=25C V = --10V DS --180 --180 --140 --140 --160 --160 --120 --120 --100 --100 --80 --80 --60 --60 --40 --40 V = --3V GS --20 --20 0 00 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 Drain to Source Voltage, V -- V IT14173 Gate to Source Voltage, V -- V IT14174 DS GS R (on) -- V R (on) -- Tc DS GS DS 20 12 I = --50A Single pulse D 18 Single pulse 10 16 14 8 12 10 6 8 4 6 4 2 2 0 0 --2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150 Gate to Source Voltage, V -- V IT14175 Case Temperature, Tc -- C IT14176 GS yfs -- I I -- V D S SD --1K 3 7 V = --10V V =0V 5 DS GS 2 3 Single pulse 2 --100 100 7 5 7 3 2 5 --10 7 3 5 3 2 2 --1.0 7 5 10 3 2 7 --0.1 5 7 5 3 3 2 --0.01 2 7 5 3 1.0 2 7 --0.001 23 5 7 2 357 23 57 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --0.1 --1.0 --10 --100 Drain Current, I -- A IT14177 Diode Forward Voltage, V -- V IT17199 D SD SW Time -- I Ciss, Coss, Crss -- V D DS 5 3 V = --30V f=1MHz DD 2 V = --10V 3 GS 2 10000 1000 7 7 5 5 3 3 2 2 1000 100 t (on) d 7 7 5 5 23 5 7 2 357 23 57 0 --5 --10 --15 --20 --25 --30 --0.1 --1.0 --10 --100 Drain to Source Voltage, V -- V Drain Current, I -- A IT14179 IT14180 DS D No. A1357-2/6 --4V V = --10V, I = --50A GS D t r V = --4V, I = --50A GS D 25C 75C Tc= --25C --6V --8V --10V 25C --25C Tc=75C 25C Tc=75C --25C 25C 75C Tc= --25C Static Drain to Source Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain to Source Ciss, Coss, Crss -- pF Source Current, I -- A On-State Resistance, R (on) -- m Drain Current, I -- A S DS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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