BC307B Amplifier Transistors PNP Silicon Features This is a PbFree Device* BC307B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 45 Vdc (BR)CEO (I = 2.0 mAdc, I = 0) C B Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C CollectorEmitter Leakage Current I CES (V = 50 V, V = 0) 0.2 15 nAdc CES BE (V = 50 V, V = 0) T = 125C 0.2 4.0 A CES BE A ON CHARACTERISTICS DC Current Gain h FE (I = 10 Adc, V = 5.0 Vdc) 150 C CE (I = 2.0 mAdc, V = 5.0 Vdc) 200 290 460 C CE (I = 100 mAdc, V = 5.0 Vdc) 180 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.10 0.3 C B (I = 10 mAdc, I = see Note 1) 0.30 0.6 C B (I = 100 mAdc, I = 5.0 mAdc) 0.25 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.7 C B (I = 100 mAdc, I = 5.0 mAdc) 1.0 C B BaseEmitter On Voltage V 0.55 0.62 0.7 Vdc BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f 280 MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE Common Base Capacitance C 6.0 pF cbo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB C Noise Figure NF 2.0 10 dB (I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz) C CE S 1. I = 10 mAdc on the constant base current characteristic, which yields the point I = 11 mAdc, V = 1.0 V. C C CE