BC307B
Amplifier Transistors
PNP Silicon
Features
This is a PbFree Device*
BC307B
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V 45 Vdc
(BR)CEO
(I = 2.0 mAdc, I = 0)
C B
Emitter Base Breakdown Voltage V 5.0 Vdc
(BR)EBO
(I = 100 Adc, I = 0)
E C
CollectorEmitter Leakage Current I
CES
(V = 50 V, V = 0) 0.2 15 nAdc
CES BE
(V = 50 V, V = 0) T = 125C 0.2 4.0 A
CES BE A
ON CHARACTERISTICS
DC Current Gain h
FE
(I = 10 Adc, V = 5.0 Vdc) 150
C CE
(I = 2.0 mAdc, V = 5.0 Vdc) 200 290 460
C CE
(I = 100 mAdc, V = 5.0 Vdc) 180
C CE
Collector Emitter Saturation Voltage V Vdc
CE(sat)
(I = 10 mAdc, I = 0.5 mAdc) 0.10 0.3
C B
(I = 10 mAdc, I = see Note 1) 0.30 0.6
C B
(I = 100 mAdc, I = 5.0 mAdc) 0.25
C B
Base Emitter Saturation Voltage V Vdc
BE(sat)
(I = 10 mAdc, I = 0.5 mAdc) 0.7
C B
(I = 100 mAdc, I = 5.0 mAdc) 1.0
C B
BaseEmitter On Voltage V 0.55 0.62 0.7 Vdc
BE(on)
(I = 2.0 mAdc, V = 5.0 Vdc)
C CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product f 280 MHz
T
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)
C CE
Common Base Capacitance C 6.0 pF
cbo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB C
Noise Figure NF 2.0 10 dB
(I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 k, f = 1.0 kHz)
C CE S
1. I = 10 mAdc on the constant base current characteristic, which yields the point I = 11 mAdc, V = 1.0 V.
C C CE