BC182, BC182B Amplifier Transistors NPN Silicon Features BC182, BC182B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 50 V (BR)CEO (I = 2.0 mA, I = 0) C B CollectorBase Breakdown Voltage V 60 V (BR)CBO (I = 10 A, I = 0) C E EmitterBase Breakdown Voltage V 6.0 V (BR)EBO (I = 100 A, I = 0) E C Collector Cutoff Current I 0.2 15 nA CBO (V = 50 V, V = 0) CB BE EmitterBase Leakage Current I 15 nA EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) BC182 40 C CE (I = 2.0 mA, V = 5.0 V) BC182 120 500 C CE BC182B 180 500 (I = 100 mA, V = 5.0 V) BC182 80 C CE CollectorEmitter On Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.07 0.25 C B (I = 100 mA, I = 5.0 mA) (Note 1) 0.2 0.6 C B BaseEmitter Saturation Voltage V 1.2 V BE(sat) (I = 100 mA, I = 5.0 mA) (Note 1) C B BaseEmitter On Voltage V V BE(on) (I = 100 A, V = 5.0 V) 0.5 C CE (I = 2.0 mA, V = 5.0 V) 0.55 0.62 0.7 C CE (I = 100 mA, V = 5.0 V) (Note 1) 0.83 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 0.5 mA, V = 3.0 V, f = 100 MHz) 100 C CE (I = 10 mA, V = 5.0 V, f = 100 MHz) 150 200 C CE Common Base Output Capacitance C 5.0 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB C Common Base Input Capacitance C 8.0 pF ib (V = 0.5 V, I = 0, f = 1.0 MHz) EB C SmallSignal Current Gain h fe (I = 2.0 mA, V = 5.0 V, f = 1.0 kHz) BC182 125 500 C CE BC182B 240 500 Noise Figure NF dB (I = 0.2 mA, V = 5.0 V, R = 2.0 k , f = 1.0 kHz) 2.0 10 C CE S 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.