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Emitter Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 45 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 500 mA C P Collector Dissipation (T =25C) (Note 2, 3) 350 mW C a T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Voltage I = 10A45 V CBO C BV Collector-Emitter Voltage I = 2mA 30 V CEO C BV Emitter-Base Voltage I = 10A5 V EBO E I Collector Cut-off Current V = 30V 15 nA CBO CB I Emitter Cut-off Current V = 4V 15 nA EBO EB h DC Current Gain V = 5V, I = 10 A 100 FE CE C V = 5V, I = 2mA 250 800 CE C V = 5V, I = 100mA 130 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.6 V CE C B I = 100mA, I = 5mA 0.25 C B V (sat) Base-Emitter Saturation Voltage I = 100mA, I = 5mA 1.2 V BE C B V (on) Base-Emitter On Voltage V = 5V, I = 2mA 0.55 0.7 V BE CE C C Output Capacitance V = 10V, f = 1MHz 5 pF OB CE f Current gain Bandwidth Product V = 5V, I = 10mA 150 MHz T CE C f = 100MHz h Small Signal Current Gain V = 5V, I = 2mA 240 900 FE CE C f = 1KHz NF Noise Figure V = 5V, I = 200mA 4 dB CE C R = 2K , f = 30Hz ~ 15KHz G V = 5V, I = 200 A, 4 CE C f = 1KHz Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150degrees C. 2002 Fairchild Semiconductor Corporation Rev. A1, August 2002