Ordering number : ENA1259A ECH8662 N-Channel Power MOSFET ECH8662 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 40 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =40V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =3.5A 3.9 6.5 S DS D R (on)1 I =3.5A, V =4.5V 23 30 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =3.5A, V =4V 25 33 m DS D GS R (on)3 I =1.5A, V =2.5V 30 42 m DS D GS Input Capacitance Ciss V =20V, f=1MHz 1130 pF DS Output Capacitance Coss V =20V, f=1MHz 77 pF DS Reverse Transfer Capacitance Crss V =20V, f=1MHz 60 pF DS Turn-ON Delay Time t (on) 14 ns d Rise Time t 34 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 93 ns d Fall Time t 55 ns f Total Gate Charge Qg 12 nC Gate-to-Source Charge Qgs V =20V, V =4.5V, I =6.5A 2.2 nC DS GS D Gate-to-Drain Miller Charge Qgd 3.4 nC Diode Forward Voltage V I =6.5A, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit V =20V V DD IN 4.5V 0V I =3.5A D V IN R =5.7 L D V OUT PW=10s D.C.1% G ECH8662 P.G 50 S Ordering Information Device Package Shipping memo ECH8662-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1259-2/7