X-On Electronics has gained recognition as a prominent supplier of ECH8668-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. ECH8668-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ECH8668-TL-H ON Semiconductor

ECH8668-TL-H electronic component of ON Semiconductor
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See Product Specifications
Part No.ECH8668-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET SWITCHING DEVICE
Datasheet: ECH8668-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.7125
10 : USD 0.6704
25 : USD 0.6704
50 : USD 0.6704
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5999
10 : USD 0.5872
30 : USD 0.5799
100 : USD 0.5726
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.3274
10 : USD 0.855
100 : USD 0.6361
500 : USD 0.5184
1000 : USD 0.4266
3000 : USD 0.391
6000 : USD 0.378
N/A

Obsolete
0
MOQ : 18
Multiples : 1
18 : USD 0.6983
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ECH8668-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ECH8668-TL-H and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA1510A ECH8668 Power MOSFET ECH8668 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain-to-Source Breakdown Voltage V I =1mA, V =0V 20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.5 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =4A 4.2 7 S DS D R (on)1 I =4A, V =4.5V 13 17 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =2A, V =2.5V 18 26 m DS D GS R (on)3 I =0.5A, V =1.8V 30 48 m DS D GS Input Capacitance Ciss 1060 pF Output Capacitance Coss V =10V, f=1MHz 180 pF DS Reverse Transfer Capacitance Crss 135 pF Turn-ON Delay Time t (on) 17.5 ns d Rise Time t 120 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 68 ns d Fall Time t 80 ns f Total Gate Charge Qg 10.8 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =7.5A 2.1 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.9 nC Diode Forward Voltage V I =7.5A, V =0V 0.74 1.2 V SD S GS P-channel Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--3A 4.9 8.3 S DS D R (on)1 I =--3A, V =--4.5V 29 38 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1.5A, V =--2.5V 41 58 m DS D GS R (on)3 I =--0.5A, V =--1.8V 64 98 m DS D GS Input Capacitance Ciss 960 pF Output Capacitance Coss V =--10V, f=1MHz 180 pF DS Reverse Transfer Capacitance Crss 140 pF Turn-ON Delay Time t (on) 14 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 92 ns d Fall Time t 68 ns f Total Gate Charge Qg 11 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--5A 2.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.8 nC Diode Forward Voltage V I =--5A, V =0V --0.82 --1.2 V SD S GS Switching Time Test Circuit N-channel P-channel V V =10V V V = --10V DD DD IN IN 4V 0V 0V --4V I =4A I = --3A D D V V IN IN R =2.5 R =3.33 L L D V D V OUT OUT PW=10s PW=10s D.C.1% D.C.1% G G ECH8668 ECH8668 P.G P.G 50 50 S S Ordering Information Device Package Shipping memo ECH8668-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1510-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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