X-On Electronics has gained recognition as a prominent supplier of EFC2J013NUZTDG MOSFETs across the USA, India, Europe, Australia, and various other global locations. EFC2J013NUZTDG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

EFC2J013NUZTDG ON Semiconductor

EFC2J013NUZTDG electronic component of ON Semiconductor
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Part No.EFC2J013NUZTDG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH 12V 17A WLCSP DUAL
Datasheet: EFC2J013NUZTDG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5302 ea
Line Total: USD 0.53 
Availability - 4466
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4466
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5302
10 : USD 0.4466
100 : USD 0.3003
500 : USD 0.2838
1000 : USD 0.2299
2500 : USD 0.22
5000 : USD 0.22
10000 : USD 0.2123
25000 : USD 0.2101

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EFC2J013NUZTDG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EFC2J013NUZTDG and other electronic components in the MOSFETs category and beyond.

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EFC2J013NUZ Power MOSFET for 1Cell Lithiumion Battery Protection 12 V, 5.8 m , 17 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable V R MAX I MAX machines. Best suited for 1-cell lithium-ion battery applications. SSS SS(ON) S 12 V 5.8 m 4.5 V 17 A Features 6.2 m 3.8 V 2.5 V Drive 2 kV ESD HBM 7.5 m 3.1 V Common-Drain Type 9.0 m 2.5 V ESD Diode-Protected Gate These Devices are PbFree, Halogen Free/BFR Free and are RoHS ELECTRICAL CONNECTION Compliant 4, 6 Applications 1-Cell Lithium-ion Battery Charging and Discharging Switch 5 Specifications ABSOLUTE MAXIMUM RATINGS (T = 25C) A 1: Source1 2: Gate1 Parameter Symbol Value Unit 2 3: Source1 Source to Source Voltage V 12 V SSS 4: Source2 5: Gate2 Gate to Source Voltage V 8 V GSS 1, 3 6: Source2 Source Current (DC) I 17 A S N-Channel Source Current (Pulse) I 68 A SP PW 10 s, duty cycle 1% PIN ASSIGNMENT 1 2 3 Total Dissipation (Note 1) P 1.8 W T S1 G1 S1 Junction Temperature T 150 C j Storage Temperature T 55 to +150 C WLCSP6 stg (2.00 x 1.49 x 0.10) Stresses exceeding those listed in the Maximum Ratings table may damage the S2 G2 S2 CASE 567UF device. If any of these limits are exceeded, device functionality should not be 4 6 5 assumed, damage may occur and reliability may be affected. Bottom View MARKING DIAGRAM THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit NT AYWZZ Junction to Ambient (Note 1) R 69.4 C/W JA 2 1. Surface mounted on ceramic substrate (5000 mm 0.8 mm). NT = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Assembly Lot = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: November, 2018 Rev. 1 EFC2J013NUZ/DEFC2J013NUZ ELECTRICAL CHARACTERISTICS (T = 25C) A Symbol Parameter Conditions Min Typ Max Unit V Source to Source Breakdown Voltage I = 1 mA, V = 0 V, V Test Circuit 12 V (BR)SSS S GS SSS I Zero-Gate Voltage Source Current V = 10 V, V = 0 V 1 A SSS SS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 1 A GSS GS SS V (th) Gate Threshold Voltage V = 6 V, I = 1 mA 0.4 1.3 V GS SS S R (on) Static Source to Source On-State I = 5 A, V = 4.5 V 3.0 4.35 5.8 m SS S GS Resistance I = 5 A, V = 3.8 V 3.2 4.6 6.2 m S GS I = 5 A, V = 3.1 V 3.4 5.0 7.5 m S GS I = 5 A, V = 2.5 V 3.8 5.6 9.0 m S GS V = 5 V, V = 3.8 V, I = 5 A t (on) Turn-ON Delay Time 11 s d SS GS S Rg = 10 k Switching Test Circuit t Rise Time 26 s r t (off) Turn-OFF Delay Time 130 s d t Fall Time 73 s f Qg Total Gate Charge V = 5 V, V = 4.5 V, I = 5 A 37 nC SS GS S V Forward Source to Source Voltage I = 3 A, V = 0 V 0.76 1.2 V F(SS) S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. t (on), t t (off), t d r, d f S2 S2 RL G2 G2 When FET1 is measured, Gate and Source of FET2 are shortcircuited. V 1 mA, 5 ms G1 G1 Rg V SS S1 S1 Figure 1. Switching Test Circuit Figure 2. V Test Circuit SSS ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) EFC2J013NUZTDG NT WLCSP6, 2.00 x 1.49 x 0.10 5,000 / Tape & Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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