EFC2J013NUZ Power MOSFET for 1Cell Lithiumion Battery Protection 12 V, 5.8 m , 17 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable V R MAX I MAX machines. Best suited for 1-cell lithium-ion battery applications. SSS SS(ON) S 12 V 5.8 m 4.5 V 17 A Features 6.2 m 3.8 V 2.5 V Drive 2 kV ESD HBM 7.5 m 3.1 V Common-Drain Type 9.0 m 2.5 V ESD Diode-Protected Gate These Devices are PbFree, Halogen Free/BFR Free and are RoHS ELECTRICAL CONNECTION Compliant 4, 6 Applications 1-Cell Lithium-ion Battery Charging and Discharging Switch 5 Specifications ABSOLUTE MAXIMUM RATINGS (T = 25C) A 1: Source1 2: Gate1 Parameter Symbol Value Unit 2 3: Source1 Source to Source Voltage V 12 V SSS 4: Source2 5: Gate2 Gate to Source Voltage V 8 V GSS 1, 3 6: Source2 Source Current (DC) I 17 A S N-Channel Source Current (Pulse) I 68 A SP PW 10 s, duty cycle 1% PIN ASSIGNMENT 1 2 3 Total Dissipation (Note 1) P 1.8 W T S1 G1 S1 Junction Temperature T 150 C j Storage Temperature T 55 to +150 C WLCSP6 stg (2.00 x 1.49 x 0.10) Stresses exceeding those listed in the Maximum Ratings table may damage the S2 G2 S2 CASE 567UF device. If any of these limits are exceeded, device functionality should not be 4 6 5 assumed, damage may occur and reliability may be affected. Bottom View MARKING DIAGRAM THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit NT AYWZZ Junction to Ambient (Note 1) R 69.4 C/W JA 2 1. Surface mounted on ceramic substrate (5000 mm 0.8 mm). NT = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Assembly Lot = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: November, 2018 Rev. 1 EFC2J013NUZ/DEFC2J013NUZ ELECTRICAL CHARACTERISTICS (T = 25C) A Symbol Parameter Conditions Min Typ Max Unit V Source to Source Breakdown Voltage I = 1 mA, V = 0 V, V Test Circuit 12 V (BR)SSS S GS SSS I Zero-Gate Voltage Source Current V = 10 V, V = 0 V 1 A SSS SS GS I Gate to Source Leakage Current V = 8 V, V = 0 V 1 A GSS GS SS V (th) Gate Threshold Voltage V = 6 V, I = 1 mA 0.4 1.3 V GS SS S R (on) Static Source to Source On-State I = 5 A, V = 4.5 V 3.0 4.35 5.8 m SS S GS Resistance I = 5 A, V = 3.8 V 3.2 4.6 6.2 m S GS I = 5 A, V = 3.1 V 3.4 5.0 7.5 m S GS I = 5 A, V = 2.5 V 3.8 5.6 9.0 m S GS V = 5 V, V = 3.8 V, I = 5 A t (on) Turn-ON Delay Time 11 s d SS GS S Rg = 10 k Switching Test Circuit t Rise Time 26 s r t (off) Turn-OFF Delay Time 130 s d t Fall Time 73 s f Qg Total Gate Charge V = 5 V, V = 4.5 V, I = 5 A 37 nC SS GS S V Forward Source to Source Voltage I = 3 A, V = 0 V 0.76 1.2 V F(SS) S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. t (on), t t (off), t d r, d f S2 S2 RL G2 G2 When FET1 is measured, Gate and Source of FET2 are shortcircuited. V 1 mA, 5 ms G1 G1 Rg V SS S1 S1 Figure 1. Switching Test Circuit Figure 2. V Test Circuit SSS ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) EFC2J013NUZTDG NT WLCSP6, 2.00 x 1.49 x 0.10 5,000 / Tape & Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2