Ordering number : ENA2179A EFC4619R Power MOSFET EFC4619R Electrical Characteristics at Ta 25 C Ratings Parameter Symbol Conditions Unit min typ max Source to Source Breakdown Voltage V(BR) I =1mA, V =0V Test Circuit 1 24 V SSS S GS Zero-Gate Voltage Source Current I V =20V, V =0V Test Circuit 1 1 A SSS SS GS Gate to Source Leakage Current I V =8V, V =0V Test Circuit 2 1 A GSS GS SS Cutoff Voltage V(off) V =10V, I =1mA Test Circuit 3 0.5 1.3 V GS SS S Forward Transfer Admittance yfs V =10V, I =3A Test Circuit 4 5.8 S SS S R(on)1 I =3A, V =4.5V Test Circuit 5 13.5 19.8 23 m SS S GS R(on)2 I =3A, V =4.0V Test Circuit 5 14 20.5 24 m SS S GS Static Source to Source On-State R(on)3 I =3A, V =3.7V Test Circuit 5 14.5 21 25.5 m SS S GS Resistance R(on)4 I =3A, V =3.1V Test Circuit 5 14.9 23 30 m SS S GS R(on)5 I =3A, V =2.5V Test Circuit 5 18.5 27 35 m SS S GS Turn-ON Delay Time t (on) 340 ns d Rise Time t 440 ns r V =10V, V =4.5V, I =3A Test Circuit 7 SS GS S Turn-OFF Delay Time t (off) 24400 ns d Fall Time t 22400 ns f Total Gate Charge Qg V =10V, V =4.5V, I =6A Test Circuit 8 21.7 nC SS GS S Forward Source to Source Voltage V I =3A, V =0V Test Circuit 6 0.8 1.2 V F(S-S) S GS No.A2179-2/9