EFC6601R-TR ON Semiconductor

Ordering number : ENA2151A EFC6601R N-Channel Power MOSFET EFC6601R Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Source-to-Source Breakdown Voltage V I =1mA, V =0V Test Circuit 1 24 V (BR)SSS S GS Zero-Gate Voltage Source Current I V =20V, V =0V Test Circuit 1 1 A SSS SS GS Gate-to-Source Leakage Current I V =8V, V =0V Test Circuit 2 1 A GSS GS SS Cutoff Voltage V (off) V =10V, I =1mA Test Circuit 3 0.5 1.3 V GS SS S Forward Transfer Admittance yfs V =10V, I =3A Test Circuit 4 15.5 S SS S R (on)1 I =3A, V =4.5V Test Circuit 5 6.6 9.5 11.5 m SS S GS R (on)2 I =3A, V =4.0V Test Circuit 5 7.0 10 12 m SS S GS Static Source-to-Source On-State Resistance R (on)3 I =3A, V =3.8V Test Circuit 5 7.3 10.5 13 m SS S GS R (on)4 I =3A, V =3.1V Test Circuit 5 8.0 11.5 15 m SS S GS R (on)5 I =3A, V =2.5V Test Circuit 5 9.0 13 17 m SS S GS Turn-ON Delay Time t (on) 280 ns d Rise Time t 630 ns r V =10V, V =4.5V, I =3A Test Circuit 7 DD GS S Turn-OFF Delay Time t(off) 53000ns d Fall Time t 47000 ns f Total Gate Charge Qg V =10V, V =4.5V, I =13A Test Circuit 8 48 nC DD GS S Forward Source-to-Source Voltage V I =3A, V =0V Test Circuit 6 0.76 1.2 V F(S-S) S GS Ordering Information Device Package Shipping memo EFC6601R-TR EFCP 5,000pcs./reel Pb Free and Halogen Free No. A2151-2/8