Ordering number : ENA1445A
EMH2308
P-Channel Power MOSFET
EMH2308
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A
DSS DS GS
Gate-to-Source Leakage Current I V =8V, V =0V 10 A
GSS GS DS
Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V
GS DS D
Forward Transfer Admittance | yfs | V =--10V, I =--1.5A 2.1 3.6 S
DS D
R (on)1 I =--3A, V =--4.5V 65 85 m
DS D GS
Static Drain-to-Source On-State Resistance R (on)2 I =--1.0A, V =--2.5V 98 137 m
DS D GS
R (on)3 I =--0.5A, V =--1.8V 155 235 m
DS D GS
Input Capacitance
Ciss 320 pF
Output Capacitance
Coss V =--10V, f=1MHz 66 pF
DS
Reverse Transfer Capacitance
Crss 50 pF
Turn-ON Delay Time
t (on) 7.1 ns
d
Rise Time
t 21 ns
r
See speci ed Test Circuit.
Turn-OFF Delay Time
t (off) 37 ns
d
Fall Time
t 32 ns
f
Total Gate Charge Qg 4.0 nC
Gate-to-Source Charge
Qgs V =--10V, V =--4.5V, I =--3A 0.6 nC
DS GS D
Gate-to-Drain Miller Charge
Qgd 1.1 nC
Diode Forward Voltage V I =--3A, V =0V --0.83 --1.2 V
SD S GS
Switching Time Test Circuit
V V = --10V
DD
IN
0V
--4.5V
I = --1.5A
D
V
IN
R =6.67
L
D V
OUT
PW=10s
D.C.1%
G
EMH2308
P.G
50
S
Ordering Information
Device Package Shipping memo
EMH2308-TL-H EMH8 3,000pcs./reel Pb Free and Halogen Free
No. A1445-2/7