Doc No. TT4-EA-10567 Revision. 2 Product Standards MOS FET MTM763200LBF MTM763200LBF Silicon N-channel MOSFET (FET1) Unit : mm Silicon P-channel MOSFET (FET2) 2.0 0.2 0.13 For Switching For DC-DC Converter 6 5 4 Features Low Drain-source On-state Resistance : RDS(on)typ. N-ch = 80 m VGS = 4.0 V) P-ch:100 m (VGS = -4.0 V) Halogen-free / RoHS compliant 12 3 (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 0.7 (0.65)(0.65) Marking Symbol JB 1.3 Basic Part Number Nch+Pch MOS 20V (Individual) 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) Packaging 3. Drain(FET2) 6. Drain(FET1) Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard) Panasonic WSMini6-F1-B JEITA SC-113DA Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain-source Voltage VDS 20 V Internal Connection FET1 Gate-source Voltage VGS 10 V (D1) (G2) (S2) (N-ch.) Drain current ID 1.9 A 6 5 4 IDp Peak drain current 12 A Drain-source Voltage VDS -20 V FET1 FET2 Gate-source Voltage VGS 10 V (P-ch.) Drain current ID -1.2 A IDp Peak drain current -7 A FET2 *1 PD 700 mW Total power dissipation Channel temperature Tch 150 C Overall Operating ambient temperature Topr -40 to +85 C 1 2 3 (S1) (G1) (D2) Tstg Storage Temperature Range -55 to +150 C Note *1 Measuring on ceramic substrate at 40 mm 38 mm 0.2 mm. Pin Name PD absolute maximum rating Non-heat sink: 150 mW. 1. Source(FET1) 4. Source(FET2) 2. Gate(FET1) 5. Gate(FET2) 3. Drain(FET2) 6. Drain(FET1) Page 1 of 8 Established : 2008-03-07 Revised : 2013-10-17 1.7 2.1Doc No. TT4-EA-10567 Revision. 2 Product Standards MOS FET MTM763200LBF Electrical Characteristics Ta = 25 C 3 C FET1 (N-ch.) Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 1.0 mA, VGS = 0 V 20 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1.0 A Gate-source Leakage Current IGSS 10 VGS = 8.0 V, VDS = 0 V A Gate-source Threshold Voltage Vth ID = 1.0 mA, VDS = 10 V 0.4 0.85 1.3 V RDS(ON)1 ID = 1.0 A, VGS = 4.0 V 80 105 *1 m Drain-source ON resistance RDS(ON)2 ID = 0.5 A, VGS = 2.5 V 100 150 *1 Yfs ID = 1.0 A, VDS = 10 V Forward transfer admittance 3.0 S Input Capacitance Ciss 280 Output Capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz pF 18 Reverse Transfer Capacitance Crss 17 VDD = 10 V, VGS = 0 to 4 V, *2 ton 12 Turn-on time ID = 1.0 A ns VDD = 10 V, VGS = 4 to 0 V, *2 toff 50 Turn-off time ID = 1.0 A Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse measurement *2 Measurement circuit for Turn-on Time / Turn-off Time Page 2of 8 Established : 2008-03-07 Revised : 2013-10-17