EM6K31 Datasheet Nch+Nch 60V 250mA Small Signal MOSFET llOutline SOT-563 V 60V DSS SC-107C R (Max.) 2.4 DS(on) EMT6 I 250mA D P 150mW D llFeatures llInner circuit 1) High-speed switching. 2) Small package(EMT6) 3) Low voltage drive(2.5V drive). llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking K31 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS Continuous drain current I 250 mA D *1 I Pulsed drain current 1 A DP Gate - Source voltage V 20 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160808 - Rev.001 EM6K31 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.3 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 250mA - 1.7 2.4 GS D V = 4.5V, I = 250mA - 2.1 3.0 GS D Static drain - source *3 R DS(on) on - state resistance V = 4.0V, I = 250mA - 2.3 3.2 GS D V = 2.5V, I = 10mA - 3.0 12.0 GS D Forward Transfer *3 Y V = 10V, I = 250mA 250 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160808 - Rev.001