EM6K33 Datasheet Nch+Nch 50V 200mA Small Signal MOSFET llOutline SOT-563 V 50V DSS SC-107C R (Max.) 2.2 DS(on) EMT6 I 200mA D P 150mW D llFeatures llInner circuit 1) High-speed switching. 2) Small package(EMT6) 3) Ultra low voltage drive(1.2V drive). llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking K33 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 50 V DSS Continuous drain current I 200 mA D *1 I Pulsed drain current 800 mA DP Gate - Source voltage V 8 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160825 - Rev.001 EM6K33 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 833 *2 Thermal resistance, junction - ambient R /W thJA element - - 1042 llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = (BR)DSS D Breakdown voltage - - - mV/ temperature coefficient T referenced to j Zero gate voltage I V = 20V, V = 0V - - 1.0 A DSS DS GS drain current Gate - Source I V = 0V, V = 8V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D voltage V I = GS(th) D Gate threshold voltage - - - V/ temperature coefficient T referenced to j V = 4.5V, I = 200mA - 1.6 2.2 GS D V = 2.5V, I = 200mA - 1.7 2.4 GS D Static drain - source *3 R V = 1.8V, I = 100mA - 1.9 2.7 DS(on) GS D on - state resistance V = 1.5V, I = 40mA - 2.0 4.0 GS D V = 1.2V, I = 20mA - 2.4 7.2 GS D Forward Transfer *3 Y V = 10V, I = 200mA 400 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160825 - Rev.001