X-On Electronics has gained recognition as a prominent supplier of TN2124K1-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN2124K1-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN2124K1-G Microchip

TN2124K1-G electronic component of Microchip
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Part No.TN2124K1-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 240V; 0.14A; 360mW; SOT23-3
Datasheet: TN2124K1-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.78 ea
Line Total: USD 2340 
Availability - 20370
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
20370
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.78
6000 : USD 0.7625
9000 : USD 0.75
12000 : USD 0.7387
15000 : USD 0.7275
27000 : USD 0.7162

4573
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8894
10 : USD 0.8796
25 : USD 0.8698
100 : USD 0.8601
250 : USD 0.8502
500 : USD 0.8404
1000 : USD 0.8307
3000 : USD 0.821

37830
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.8128

1348
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 41
Multiples : 1
41 : USD 0.9796
50 : USD 0.9687
100 : USD 0.9261
200 : USD 0.8742
1000 : USD 0.7875

20370
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7862
6000 : USD 0.7784
9000 : USD 0.7705
12000 : USD 0.7628
15000 : USD 0.7552

4573
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 14
Multiples : 1
14 : USD 0.8525
25 : USD 0.8431
100 : USD 0.8336
250 : USD 0.824
500 : USD 0.8146
1000 : USD 0.8051
3000 : USD 0.7957

37830
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7878

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN2124K1-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2124K1-G and other electronic components in the MOSFETs category and beyond.

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TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertexs Ease of paralleling well-proven, silicon-gate manufacturing process. This Low C and fast switching speeds combination produces a device with the power handling ISS capabilities of bipolar transistors and the high input impedance Excellent thermal stability and positive temperature coefcient inherent in MOS devices. Integral source-drain diode Characteristic of all MOS structures, this device is free High input impedance and high gain from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide Logic level interfaces ideal for TTL and CMOS range of switching and amplifying applications where very Solid state relays low threshold voltage, high breakdown voltage, high input Battery operated systems impedance, low input capacitance, and fast switching speeds Photo-voltaic drives are desired. Analog switches General purpose line drivers Telecom switches Ordering Information R V Package Option DS(ON) GS(th) BV /BV DSS DGS Device max max (V) TO-236AB (SOT-23) () (V) TN2124 TN2124K1-G 240 15 2.0 -G indicates package is RoHS compliant (Green) Pin Conguration DRAIN Absolute Maximum Ratings SOURC E Parameter Value GATE Drain-to-source voltage BV DSS TO-236AB (SOT-23) (K1) Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V O O W = Code for Week Sealed Operating and storage temperature -55 C to +150 C N 1 C W = Green Packaging O Soldering temperature* 300 C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device TO-236AB (SOT-23) (K1) may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN2124 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C O O A ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB 134 250 0.36 200 350 134 250 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 240 - - V V = 0V, I = 1.0mA DSS GS D V Gate threshold voltage 0.8 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - 0.1 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current A V = 0.8 Max Rating, DSS DS - - 100 V = 0V, T = 125C GS A I On-state drain current 140 - - mA V = 4.5V, V = 25V D(ON) GS DS - - 30 V = 3.0V, I = 25mA GS D R Static drain-to-source on-state resistance DS(ON) - - 15 V = 4.5V, I = 120mA GS D O R Change in R with temperature - 0.7 1.0 %/ C V = 4.5V, I = 120mA DS(ON) DS(ON) GS D G Forward transductance 100 170 - mmho V = 25V, I = 120mA FS DS D C Input capacitance - 38 50 ISS V = 0V, GS C Common source output capacitance - 9.0 15 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 5.0 RSS t Turn-on delay time - 4.0 7.0 d(ON) V = 25V, DD t Rise time - 2.0 5.0 r ns I = 140mA, D t Turn-off delay time - 7.0 10 d(OFF) R = 25 GEN t Fall time - 9.0 12 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 120mA SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = 120mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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