X-On Electronics has gained recognition as a prominent supplier of TN2540N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN2540N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN2540N8-G Microchip

TN2540N8-G electronic component of Microchip
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Part No.TN2540N8-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 400V; 1A; 1.6W; SOT89
Datasheet: TN2540N8-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 1.5 ea
Line Total: USD 750 
Availability - 10938
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
10938
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 500
Multiples : 500
500 : USD 1.5
1000 : USD 1.4375
1500 : USD 1.3125
2000 : USD 1.0125
4000 : USD 0.9625

4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.5723
10 : USD 2.2289
30 : USD 2.0132
100 : USD 1.7804
500 : USD 1.6812
1000 : USD 1.6373

4831
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.573
100 : USD 1.331
500 : USD 1.232

10670
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 500
Multiples : 500
500 : USD 2.6343
1000 : USD 2.1261
1500 : USD 1.8288
2000 : USD 1.618
4000 : USD 1.4544

1940
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 31
Multiples : 1
31 : USD 1.3227
50 : USD 1.3163
100 : USD 1.313
200 : USD 1.279
1000 : USD 1.2757
2000 : USD 1.2724

822
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 8
Multiples : 1
8 : USD 1.7404
10 : USD 1.7226
25 : USD 1.7048
100 : USD 1.6869
250 : USD 1.6691
500 : USD 1.6512

13580
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 1.6349

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN2540N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2540N8-G and other electronic components in the MOSFETs category and beyond.

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TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (2.0V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (125pF max.) combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input Low on-resistance impedance and positive temperature coefcient inherent Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this Low input and output leakage device is free from thermal runaway and thermally-induced secondary breakdown. Complementary N- and P-channel devices Supertexs vertical DMOS FETs are ideally suited to a Applications wide range of switching and amplifying applications where Logic level interfaces - ideal for TTL and CMOS very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Solid state relays speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information R I V Package Options DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (min) (max) (V) TO-92 TO-243AA (SOT-89) Die* () (A) (V) TN2540 TN2540N3-G TN2540N8-G TN2540ND 400 12 1.0 2.0 -G indicates package is RoHS compliant (Green) * MIL visual screening available Pin Congurations DRAIN SOURCE SOURCE DRAIN DRAIN GATE Absolute Maximum Ratings Parameter Value GATE TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C T N YY = Year Sealed O 2 5 4 0 WW = Week Sealed Soldering temperature* 300 C Y Y W W = Green Packaging Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous TO-92 (N3) operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. W = Code for week sealed T N 5 D W * Distance of 1.6mm from case for 10 seconds. = Green Packaging TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN2540 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 175 2.0 0.74 125 170 175 2.0 TO-243AA (SOT-89) 260 1.8 1.6 15 78 260 1.8 Notes: I (continuous) is limited by max rated T . D j Mounted on FR5 Board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 400 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.6 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -2.5 -4.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - 1.0 mA V = 0V, T = 125C GS A 0.3 0.5 - V = 4.5V, V = 25V GS DS I On-state drain current A D(ON) 0.75 1.0 - V = 10V, V = 25V GS DS - 8.0 12 V = 4.5V, I = 150mA GS D R Static drain-to-source on-state resistance DS(ON) - 8.0 12 V = 10V, I = 500mA GS D O R Change in R with temperature - - 0.75 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 125 200 - mmho V = 25V, I = 100mA FS DS D C Input capacitance - 95 125 ISS V = 0V, GS C Common source output capacitance - 20 70 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 10 25 RSS t Turn-on delay time - - 20 d(ON) V = 25V, DD t Rise time - - 15 r I = 1.0A, ns D t Turn-off delay time - - 25 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 200mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. V Switching Waveforms and Test Circuit DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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