TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (2.0V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (125pF max.) combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input Low on-resistance impedance and positive temperature coefcient inherent Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this Low input and output leakage device is free from thermal runaway and thermally-induced secondary breakdown. Complementary N- and P-channel devices Supertexs vertical DMOS FETs are ideally suited to a Applications wide range of switching and amplifying applications where Logic level interfaces - ideal for TTL and CMOS very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Solid state relays speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information R I V Package Options DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (min) (max) (V) TO-92 TO-243AA (SOT-89) Die* () (A) (V) TN2540 TN2540N3-G TN2540N8-G TN2540ND 400 12 1.0 2.0 -G indicates package is RoHS compliant (Green) * MIL visual screening available Pin Congurations DRAIN SOURCE SOURCE DRAIN DRAIN GATE Absolute Maximum Ratings Parameter Value GATE TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C T N YY = Year Sealed O 2 5 4 0 WW = Week Sealed Soldering temperature* 300 C Y Y W W = Green Packaging Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous TO-92 (N3) operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. W = Code for week sealed T N 5 D W * Distance of 1.6mm from case for 10 seconds. = Green Packaging TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN2540 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 175 2.0 0.74 125 170 175 2.0 TO-243AA (SOT-89) 260 1.8 1.6 15 78 260 1.8 Notes: I (continuous) is limited by max rated T . D j Mounted on FR5 Board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 400 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.6 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -2.5 -4.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - 1.0 mA V = 0V, T = 125C GS A 0.3 0.5 - V = 4.5V, V = 25V GS DS I On-state drain current A D(ON) 0.75 1.0 - V = 10V, V = 25V GS DS - 8.0 12 V = 4.5V, I = 150mA GS D R Static drain-to-source on-state resistance DS(ON) - 8.0 12 V = 10V, I = 500mA GS D O R Change in R with temperature - - 0.75 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 125 200 - mmho V = 25V, I = 100mA FS DS D C Input capacitance - 95 125 ISS V = 0V, GS C Common source output capacitance - 20 70 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 10 25 RSS t Turn-on delay time - - 20 d(ON) V = 25V, DD t Rise time - - 15 r I = 1.0A, ns D t Turn-off delay time - - 25 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 200mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. V Switching Waveforms and Test Circuit DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2