X-On Electronics has gained recognition as a prominent supplier of TN5335K1-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN5335K1-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN5335K1-G Microchip

Hot TN5335K1-G electronic component of Microchip
TN5335K1-G Microchip
TN5335K1-G MOSFETs
TN5335K1-G  Semiconductors

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See Product Specifications
Part No. TN5335K1-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 350V; 0.75A; 360mW; SOT23-3
Datasheet: TN5335K1-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.5402 ea
Line Total: USD 1620.6 
Availability - 66930
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 500
Multiples : 500
500 : USD 0.9312
1000 : USD 0.9262
3000 : USD 0.9225
6000 : USD 0.9175
9000 : USD 0.7313
12000 : USD 0.7275
15000 : USD 0.725

7699
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 76
Multiples : 1
76 : USD 0.8564
76 : USD 0.8528
83 : USD 0.7799
100 : USD 0.7431
250 : USD 0.7392
500 : USD 0.7353
1000 : USD 0.7031
3000 : USD 0.6992
6000 : USD 0.6406

66930
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.5402

33784
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 1.25
25 : USD 0.9545
100 : USD 0.836
3000 : USD 0.836
9000 : USD 0.7172

66930
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.5402

7699
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 76
Multiples : 1
76 : USD 0.8528
83 : USD 0.7799
100 : USD 0.7431
250 : USD 0.7392
500 : USD 0.7353
1000 : USD 0.7031
3000 : USD 0.6992
6000 : USD 0.6406

8730
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 500
Multiples : 500
500 : USD 1.0956
1000 : USD 1.0898
3000 : USD 1.0853
6000 : USD 1.0794
9000 : USD 0.8602

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Type
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Forward Transconductance - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN5335K1-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN5335K1-G and other electronic components in the MOSFETs category and beyond.

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TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low Threshold The TN5335 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure High Input Impedance and a well-proven silicon-gate manufacturing process. Low Input Capacitance This combination produces a device with the power Fast Switching Speeds handling capabilities of bipolar transistors and the high Low On-Resistance input impedance and positive temperature coefficient Free from Secondary Breakdown inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Low Input and Output Leakage thermally induced secondary breakdown. Complementary N-Channel and P-Channel Devices Microchips vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown Applications voltage, high input impedance, low input capacitance Logic-Level Interfaces (Ideal for TTL and CMOS) and fast switching speeds are desired. Solid-State Relays Battery-Operated Systems Photovoltaic Drives Analog Switches General Purpose Line Drivers Telecommunication Switches Package Types 3-lead SOT-23 3-lead SOT-89 (Top view) (Top view) DRAIN DRAIN SOURCE SOURCE DRAIN GATE GATE See Table 2-1 and Table 2-2 for pin information. 2021 Microchip Technology Inc. DS20005955A-page 1TN5335 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-Source Voltage ...................................................................................................................................... BV DSS Drain-to-Gate Voltage ......................................................................................................................................... BV DGS Gate-to-Source Voltage ......................................................................................................................................... 20V Operating Ambient Temperature, T ................................................................................................... 55C to +150C A Storage Temperature, T ..................................................................................................................... 55C to +150C S Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. All DC parameters are 100% tested at 25C unless A otherwise stated. Pulse test: 300 s pulse, 2% duty cycle Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BV 350 V V = 0V, I = 100 A DSS GS D Gate Threshold Voltage V 0.6 2 V V = V , I = 1 mA GS(th) GS DS D V = V , I = 1 mA GS DS D Change in V with Temperature V 4.5 mV/C GS(th) GS(th) (Note 1) Gate Body Leakage Current I 100 nA V = 20V, V = 0V GSS GS DS 1 A V = 0V, V = 100V GS DS V = 0V, GS 10 A V = Maximum rating DS Zero-Gate Voltage Drain Current I DSS V = 0.8 Maximum rating, DS 1 mA V = 0V, T = 125C GS A (Note 1) 300 mA V = 4.5V, V = 25V GS DS On-State Drain Current I D(ON) 750 mA V = 10V, V = 25V GS DS 15 V = 3V, I = 20 mA GS D Static Drain-to-Source On-state Resistance R 15 V = 4.5V, I = 150 mA DS(ON) GS D 15 V = 10V, I = 200 mA GS D V = 4.5V, I = 150 mA GS D Change in R with Temperature R 1 %/C DS(ON) DS(ON) (Note 1) Note 1: Specification is obtained by characterization and is not 100% tested. DS20005955A-page 2 2021 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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