Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (95pF typical) combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input impedance Low on-resistance and positive temperature coefficient inherent in MOS devices. Free from secondary breakdown Characteristic of all MOS structures, this device is free Low input and output leakage from thermal runaway and thermally-induced secondary breakdown. Applications Logic level interfaces - ideal for TTL and CMOS Supertexs vertical DMOS FETs are ideally suited to a wide Solid state relays range of switching and amplifying applications where very Battery operated systems low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds Photo voltaic drives are desired. Analog switches General purpose line drivers Telecom switches Ordering Information Product Summary R I Part Number Package Option Packing BV /BV V DS(ON) D(ON) DSS DGS GS(th) (V) (max) (V) (max) () (min) (A) TP0604N3-G 3-Lead TO-92 1000/Bag -40 2.0 -2.0 -2.4 TP0604N3-G P002 TP0604N3-G P003 TP0604N3-G P005 3-Lead TO-92 2000/Reel Pin Configuration TP0604N3-G P013 TP0604N3-G P014 DRAIN TP2404NW Die in wafer form --- SOURCE TP2404NJ Die on adhesive tape --- GATE TP2404ND Die in waffle pack --- For packaged products, -G indicates package is RoHS compliant (Green). TO-92 (N3) TO-92 taping specifications and winding styles per EIA-468 Standard. Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF57 for layout and dimensions. Product Marking Absolute Maximum Ratings SiTP YY = Year Sealed 0604 WW = Week Sealed Parameter Value YYWW = Green Packaging Drain-to-source voltage BV DSS Package may or may not include the following marks: Si or Drain-to-gate voltage BV DGS TO-92 (N3) Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Doc. DSFP-TP0604 Supertex inc. C082012 www.supertex.comTP0604 Thermal Characteristics Power Dissipation I I D D I I O ja DR DRM Package T = 25 C (continuous) (pulsed) A O ( C/W) (A) (A) (A) (A) (W) TO-92 -0.43 -4.2 0.74 132 -0.43 -4.2 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -40 - - V V = 0V, I = -2.0mA DSS GS D V Gate threshold voltage -1.0 - -2.4 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - -3.0 -4.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA V = 0V, T = 125C GS A -0.4 -0.6 - V = -5.0V, V = -20V GS DS I ON-state drain current A D(ON) -2.0 -3.3 - V = -10V, V = -20V GS DS - 2.0 3.5 V = -5.0V, I = -250mA GS D R Static drain-to-source on-state resistance DS(ON) - 1.5 2.0 V = -10V, I = -1.0A GS D O R Change in R with temperature - - 1.2 %/ C V = -10V, I = -1.0A DS(ON) DS(ON) GS D G Forward transductance 400 600 - mmho V = -20V, I = -1.0A FS DS D C Input capacitance - 95 150 ISS V = 0V, GS C Common source output capacitance - 85 120 pF V = -20V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 35 60 RSS t Turn-on delay time - 5.0 8.0 d(ON) V = -20V, DD t Rise time - 7.0 18 r I = -1.0A, ns D t Turn-off delay time - 10 15 d(OFF) R = 25 GEN t Fall time - 6.0 19 f V Diode forward voltage drop - -1.3 -2.0 V V = 0V, I = -1.5A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = -1.5A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulsed test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R 90% GEN -10V t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT OUTPUT 0V 90% 90% R L OUTPUT 10% 10% VDD VDD Doc. DSFP-TP0604 Supertex inc. C082012 2 www.supertex.com