TP0202K Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )V (V) I (mA) Q (Typ.) DS DS(on) GS(th) D g Available TrenchFET Power MOSFET 1.4 at V = - 10 V - 1.3 to - 3.0 - 385 GS High-Side Switching - 30 1000 3.5 at V = - 4.5 V - 1.3 to - 3.0 - 240 Low On-Resistance: 1.2 (typ.) GS Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 14 ns (typ.) Low Input Capacitance: 31 pF (typ.) 2000 V ESD Protection TO-236 (SOT-23) APPLICATIONS G 1 Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. Battery Operated Systems D 3 Power Supply Converter Circuits Marking Code: 2Kwll Solid-State Relays 2K = Part Number Code for TP0202K S 2 w = Week Code ll = Lot Traceability BENEFITS Top View Ease in Driving Switches Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free) Low Offset (Error) Voltage TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free) Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 385 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 280 mA A b Pulsed Drain Current I - 750 DM T = 25 C 350 A a P mW Power Dissipation D T = 85 C 185 A a R Maximum Junction-to-Ambient 350 C/W thJA Operating Junction and Storage Temperature Range T T - 55 to 150 C J, stg Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71609 www.vishay.com S-83053-Rev. E, 29-Dec-08 1TP0202K Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 100 A - 30 - 38 DS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 1.3 - 2 - 3.0 GS(th) DS GS D V = 0 V, V = 5 V 50 DS GS I Gate-Body Leakage GSS V = 0 V, V = 10 V 300 nA DS GS V = - 30 V, V = 0 V - 100 DS GS I Zero Gate Voltage Drain Current DSS V = - 30 V, V = 0 V, T = 85 C A - 10 DS GS J a I V = - 10 V, V = - 10 V - 500 mA On-State Drain Current D(on) GS DS V = - 4.5 V, I = - 50 mA 2.1 3.5 GS D a R Drain-Source On-Resistance DS(on) V = - 10 V, I = - 500 mA 1.25 1.4 GS D a g V = - 5 V, I = - 200 mA 315 mS Forward Transconductance fs DS D a Diode Forward Voltage V I = - 250 mA, V = 0 V - 1.2 V SD S GS Dynamic Q Total Gate Charge 1000 g V = - 16 V, V = - 10 V DS GS Gate-Source Charge Q 225 pC gs I - 200 mA D Q Gate-Drain Charge 175 gd C Input Capacitance 31 iss V = - 15 V, V = 0 V DS GS C Output Capacitance 11 pF oss f = 1 MHz C Reverse Transfer Capacitance 4 rss b Switching t 9 d(on) Turn-On Time t V = - 15 V, R = 75 6 r DD L ns I - 200 mA, V = - 10 V, R = 6 t D GEN G 30 d(off) Turn-Off Time t 20 f Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71609 2 S-83053-Rev. E, 29-Dec-08