TP0610K Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )V (V) I (mA) DS DS(on) GS(th) D Definition TrenchFET Power MOSFET - 60 6 at V = - 10 V - 1 to - 3 - 185 GS High-Side Switching Low On-Resistance: 6 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) TO-236 Low Input Capacitance: 20 pF (typ.) (SOT-23) 2000 V ESD Protection Marking Code: 6Kwll Compliant to RoHS Directive 2002/95/EC 6K = Part Number Code for TP0610K G 1 w = Week Code ll = Lot Traceability APPLICATIONS 3 D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. S 2 Battery Operated Systems Power Supply Converter Circuits Solid-State Relays Top View Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free) BENEFITS TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free) Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 60 DS V V Gate-Source Voltage 20 GS T = 25 C - 185 A a I Continuous Drain Current D T = 100 C - 115 mA A b Pulsed Drain Current I - 800 DM T = 25 C 350 A a P mW Power Dissipation D T = 100 C 140 A a R Maximum Junction-to-Ambient 350 C/W thJA T Operating Junction and Storage Temperature Range T - 55 to 150 C J, stg Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71411 www.vishay.com S10-1476-Rev. H, 05-Jul-10 1TP0610K Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 10 A - 60 DS GS D V Gate-Threshold Voltage V V = V , I = - 250 A - 1 - 3 GS(th) DS GS D V = 0 V, V = 20 V 10 A DS GS V = 0 V, V = 10 V 200 DS GS Gate-Body Leakage I GSS V = 0 V, V = 10 V, T = 85 C 500 DS GS J V = 0 V, V = 5 V 100 nA DS GS V = - 60 V, V = 0 V - 25 DS GS Zero Gate Voltage Drain Current I DSS V = - 60 V, V = 0 V, T = 85 C - 250 DS GS J V = - 10 V, V = - 4.5 V - 50 GS DS a On-State Drain Current I mA D(on) V = - 10 V, V = - 10 V - 600 GS DS V = - 4.5 V, I = - 25 mA 10 GS D a Drain-Source On-Resistance R V = - 10 V, I = - 500 mA 6 DS(on) GS D V = - 10 V, I = - 500 mA, T =125 C 9 GS D J a Forward Transconductance g V = - 10 V, I = - 100 mA 80 mS fs DS D Diode Forward Voltage V I = - 200 mA, V = 0 V - 1.4 V SD S GS Dynamic Total Gate Charge Q 1.7 g V = - 30 V, V = - 15 V DS GS Gate-Source Charge Q 0.26 nC gs I - 500 mA D Gate-Drain Charge Q 0.46 gd Input Capacitance C 23 iss V = - 25 V, V = 0 V DS GS Output Capacitance C 10 pF oss f = 1 MHz Reverse Transfer Capacitance C 5 rss b Switching Turn-On Time t 20 d(on) V = - 25 V, R = 150 DD L ns I - 200 mA, V = - 10 V, R = 10 Turn-Off Time t D GEN g 35 d(off) Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71411 2 S10-1476-Rev. H, 05-Jul-10