TP0101K Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 e V (V) R () I (A) DS DS(on) D Available 0.65 at V = - 4.5 V - 0.58 GS TrenchFET Power MOSFET - 20 0.85 at V = - 2.5 V - 0.5 GS ESD Protected: 3000 V APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems, DC/DC Converters Power Supply Converter Circuits Load/Power Switching-Cell Phones, Pagers D TO-236 (SOT-23) Marking Code: K4ywl 100 G 1 G K4 = Part Number Code for TP0101K 3 D y = Year Code w = Week Code S 2 l = Lot Traceability Top View S Ordering Information: TP0101K-T1-E3 (Lead (Pb)-free) TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS T = 25 C A - 0.58 b I Continuous Drain Current (T = 150 C) D J T = 70 C A - 0.46 A a I - 2 Pulsed Drain Current DM b I Continuous Source-Drain (Diode Current) S - 0.3 T = 25 C 0.35 A b P W Power Dissipation D T = 70 C A 0.22 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 10 s. THERMAL RESISTANCE RATINGS Parameter Symbol LimitsUnit b R 357 C/W Thermal Resistance, Junction-to-Ambient thJA Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 10 s. Document Number: 72692 www.vishay.com S-83053-Rev. B, 29-Dec-08 1 TP0101K Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 10 A Drain-Source Breakdown Voltage - 20 DS GS D V V V = V , I = - 50 A Gate Threshold Voltage - 0.5 - 0.7 - 1.0 GS(th) DS GS D I V = - 0 V, V = 4.5 V Gate-Body Leakage 5 GSS DS GS V = - 20 V, V = 0 V - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J V - 5 V, V = - 4.5 V - 1.2 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 2.5 V - 0.5 DS GS V = - 4.5 V, I = - 0.58 A 0.42 0.65 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 0.5 A 0.64 0.85 GS D a g V = - 5 V, I = - 0.58 A 1300 mS Forward Transconductance fs DS D a V I = - 0.3 A, V = 0 V - 0.9 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 1400 2200 g V = - 6 V, V = - 4.5 V DS GS Gate-Source Charge Q 300 pC gs I - 0.58 A D Q Gate-Drain Charge 250 gd R Gate Resistance 150 g t 25 35 d(on) Turn-On Time t V = - 6 V, R = 10 30 45 r DD L ns I - 0.58 A, V = - 4.5 V, R = 6 t D GEN g 55 85 d(off) Turn-Off Time t 38 60 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72692 2 S-83053-Rev. B, 29-Dec-08