X-On Electronics has gained recognition as a prominent supplier of TP0101K-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. TP0101K-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TP0101K-T1-GE3 Vishay

TP0101K-T1-GE3 electronic component of Vishay
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Part No.TP0101K-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 0.58A 0.35W 650mohm 4.5V
Datasheet: TP0101K-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2691 ea
Line Total: USD 807.3 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 3000
Multiples : 1
3000 : USD 0.2691

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the TP0101K-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TP0101K-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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TP0101K Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 e V (V) R () I (A) DS DS(on) D Available 0.65 at V = - 4.5 V - 0.58 GS TrenchFET Power MOSFET - 20 0.85 at V = - 2.5 V - 0.5 GS ESD Protected: 3000 V APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems, DC/DC Converters Power Supply Converter Circuits Load/Power Switching-Cell Phones, Pagers D TO-236 (SOT-23) Marking Code: K4ywl 100 G 1 G K4 = Part Number Code for TP0101K 3 D y = Year Code w = Week Code S 2 l = Lot Traceability Top View S Ordering Information: TP0101K-T1-E3 (Lead (Pb)-free) TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS T = 25 C A - 0.58 b I Continuous Drain Current (T = 150 C) D J T = 70 C A - 0.46 A a I - 2 Pulsed Drain Current DM b I Continuous Source-Drain (Diode Current) S - 0.3 T = 25 C 0.35 A b P W Power Dissipation D T = 70 C A 0.22 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 10 s. THERMAL RESISTANCE RATINGS Parameter Symbol LimitsUnit b R 357 C/W Thermal Resistance, Junction-to-Ambient thJA Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 10 s. Document Number: 72692 www.vishay.com S-83053-Rev. B, 29-Dec-08 1 TP0101K Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 10 A Drain-Source Breakdown Voltage - 20 DS GS D V V V = V , I = - 50 A Gate Threshold Voltage - 0.5 - 0.7 - 1.0 GS(th) DS GS D I V = - 0 V, V = 4.5 V Gate-Body Leakage 5 GSS DS GS V = - 20 V, V = 0 V - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J V - 5 V, V = - 4.5 V - 1.2 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 2.5 V - 0.5 DS GS V = - 4.5 V, I = - 0.58 A 0.42 0.65 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 0.5 A 0.64 0.85 GS D a g V = - 5 V, I = - 0.58 A 1300 mS Forward Transconductance fs DS D a V I = - 0.3 A, V = 0 V - 0.9 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 1400 2200 g V = - 6 V, V = - 4.5 V DS GS Gate-Source Charge Q 300 pC gs I - 0.58 A D Q Gate-Drain Charge 250 gd R Gate Resistance 150 g t 25 35 d(on) Turn-On Time t V = - 6 V, R = 10 30 45 r DD L ns I - 0.58 A, V = - 4.5 V, R = 6 t D GEN g 55 85 d(off) Turn-Off Time t 38 60 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72692 2 S-83053-Rev. B, 29-Dec-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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