X-On Electronics has gained recognition as a prominent supplier of TP2540N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TP2540N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TP2540N3-G Microchip

TP2540N3-G electronic component of Microchip
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See Product Specifications
Part No.TP2540N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -400V; -0.4A; 740mW; TO92
Datasheet: TP2540N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 1.2262 ea
Line Total: USD 30.65 
Availability - 1953
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
1953
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 25
Multiples : 25
25 : USD 1.2262
250 : USD 1.1325
500 : USD 1.1162
1000 : USD 1.0787
3000 : USD 1.03
5000 : USD 1.0137
8000 : USD 0.9987

   
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Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Pulsed Drain Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TP2540N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TP2540N3-G and other electronic components in the MOSFETs category and beyond.

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TP2540 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description 2.4V Maximum Low Threshold The TP2540 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure High Input Impedance and a well-proven silicon-gate manufacturing process. 60 pF Low Input Capacitance This combination produces a device with the power Fast Switching Speeds handling capabilities of bipolar transistors and the high Low On-Resistance input impedance and positive temperature coefficient Free from Secondary Breakdown inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Low Input and Output Leakage thermally induced secondary breakdown. Applications Microchips vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications Logic-Level Interfaces (Ideal for TTL and CMOS) where very low threshold voltage, high breakdown Solid-State Relays voltage, high input impedance, low input capacitance, Battery-Operated Systems and fast switching speeds are desired. Photovoltaic Drives Analog Switches General Purpose Line Drivers Telecommunication Switches Package Type 3-lead SOT-89 3-lead TO-92 (Top view) (Top view) DRAIN DRAIN SOURCE SOURCE DRAIN GATE GATE See Table 3-1 and Table 3-2 for pin information. 2020 Microchip Technology Inc. DS20006371A-page 1TP2540 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-Source Voltage....................................................................................................................................... BV DSS Drain-to-Gate Voltage .......................................................................................................................................... BV DGS Gate-to-Source Voltage.......................................................................................................................................... 20V Operating Ambient Temperature, T .................................................................................................... 55C to +150C A Storage Temperature, T ...................................................................................................................... 55C to +150C S Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. All DC parameters are 100% tested at 25C unless A otherwise stated. Pulse test: 300 s pulse, 2% duty cycle. Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BV 400 V V = 0V, I = 2 mA DSS GS D Gate Threshold Voltage V 1 2.4 V V = V , I = 1 mA GS(th) GS DS D V = V , I = 1 mA GS DS D Change in V with Temperature V 4.8 mV/C GS(th) GS(th) (Note 1) Gate Body Leakage Current I 100 nA V = 20V, V = 0V GSS GS DS V = 0V, GS 10 A V = Maximum rating DS Zero-Gate Voltage Drain Current I V = 0.8 Maximum rating, DSS DS 1 mA V = 0V, T = 125C GS A (Note 1) 0.2 0.3 A V = 4.5V, V = 25V GS DS On-State Drain Current I D(ON) 0.4 1.1 A V = 10V, V = 25V GS DS 20 30 V = 4.5V, I = 100 mA GS D Static Drain-to-Source On-State Resistance R DS(ON) 19 25 V = 10V, I = 100 mA GS D V = 10V, I = 100 mA GS D Change in R with Temperature R 0.75 %/C DS(ON) DS(ON) (Note 1) Note 1: Specification is obtained by characterization and is not 100% tested. DS20006371A-page 2 2020 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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