TPC6011 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON-resistance: R = 16 m (typ.) DS (ON) ( V = 10V) GS Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 1.3 to 2.5 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 20 V GSS DC I 6 D (Note 1) Drain current A Pulse I 24 DP (Note 1) JEDEC Drain power dissipation (t = 5 s) P 2.2 W D (Note 2a) JEITA Drain power dissipation (t = 5 s) TOSHIBA 2-3T1A P 0.7 W D (Note 2b) Weight: 0.011 g (typ.) Single pulse avalanche energy (Note 3) E 2.3 mJ AS Avalanche current I 3 A AR Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol MaxUnit 6 4 5 Thermal resistance, channel to ambient R 56.8 C/W th (ch-a) (t = 5 s) (Note 2a) Thermal resistance, channel to ambient R 178.5 C/W th (ch-a) (t = 5 s) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-07 1 2013-11-01 TPC6011 Marking (Note 4) Lot No. Lot code (month) Part No. Product-specific code S2L (or abbreviation code) Pin 1 Lot code Note 5 (year) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 200 H, R = 25 , I = 3 A DD ch G AR Note 4: on lower left of the marking indicates Pin 1. Note 5: A dot marking identifies the indication of product Labels. Without a dot: Pb /INCLUDES > MCV With a dot: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01