X-On Electronics has gained recognition as a prominent supplier of TPC6111(TE85L,F,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPC6111(TE85L,F,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPC6111(TE85L,F,M) Toshiba

TPC6111(TE85L,F,M) electronic component of Toshiba
TPC6111(TE85L,F,M) Toshiba
TPC6111(TE85L,F,M) MOSFETs
TPC6111(TE85L,F,M)  Semiconductors

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See Product Specifications
Part No. TPC6111(TE85L,F,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET P-Ch FET RDS 33mohm IDSS -10uA VDS -20V
Datasheet: TPC6111(TE85L,F,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2773
6000 : USD 0.2746
9000 : USD 0.2718
12000 : USD 0.2691
15000 : USD 0.2664
24000 : USD 0.2638
30000 : USD 0.2611
45000 : USD 0.2585
75000 : USD 0.256
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8503
10 : USD 0.7571
100 : USD 0.4628
500 : USD 0.3764
1000 : USD 0.3101
3000 : USD 0.272
6000 : USD 0.2503
9000 : USD 0.2436
N/A

Obsolete
   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the TPC6111(TE85L,F,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC6111(TE85L,F,M) and other electronic components in the MOSFETs category and beyond.

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TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC6111 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R = 33 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 20 V) DSS DS Enhancement mode: V = 0.3 to 1.0 V th (V = 10 V, I = 1mA) DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Drain-gate voltage (R = 20 k) V 20 V GS DGR Gate-source voltage V 8 V GSS I 5.5 DC (Note 1) D Drain current A Pulse (Note 1) I 22 DP Drain power dissipation (t = 5 s) 2.2 W P D (Note 2a) Drain power dissipation (t = 5 s) JEDEC P 0.7 W D (Note 2b) JEITA 5.1 mJ Single pulse avalanche energy (Note 3) E AS TOSHIBA 2-3T1A Avalanche current I 2.8 A AR Weight: 0.011 g (typ.) Repetitive avalanche energy (Note 4) E 0.019 mJ AR Channel temperature T 150 C ch 55~150 Storage temperature range T C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration 6 45 Characteristics Symbol MaxUnit Thermal resistance, channel to ambient (t = 5 s) R 56.8 C/W th (ch-a) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) R 178.5 C/W th (ch-a) (Note 2b) 1 2 3 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2009-04 1 2013-11-01 TPC6111 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 20 V, V = 0 V 10 A DSS DS GS V I = 10 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = 8 V 12 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 1mA 0.3 1.0 V th DS D R V = 1.5 V, I = 1.4 A 76 150 DS (ON) GS D R V = 1.8 V, I = 1.4 A 56 80 DS (ON) GS D Drain-source ON resistance m R V = 2.5 V, I = 2.8 A 44 57 DS (ON) GS D R V = 4.5 V, I = 2.8 A 33 40 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 2.8 A 7 14 S fs DS D Input capacitance C iss 700 V = 10 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C rss DS GS 100 Output capacitance C 140 oss Rise time t 7 r I = 2.8 A 0 V D V GS V OUT 5 V Turn-on time t 12 on Switching time ns Fall time t f 30 V 10 V DD Turn-off time t 95 off Duty 1%, t = 10 s w Total gate charge Q g 10 (gate-source plus gate-drain) V 16 V, V = 5 V, DD GS nC Gate-source charge 1 Q I = 5.5 A gs 1 D 1.2 Gate-drain (miller) charge Q gd 2.5 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Drain reverse Pulse (Note 1) I 22 A DRP current Forward voltage (diode) V I = 5.5 A, V = 0 V 1.2 V DSF DR GS 2 2013-11-01 4.7 R = 3.6 L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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