X-On Electronics has gained recognition as a prominent supplier of TPC8129,LQ(S MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPC8129,LQ(S MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPC8129,LQ(S Toshiba

TPC8129,LQ(S electronic component of Toshiba
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Part No.TPC8129,LQ(S
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch -30V FET 1650pF -9A 1.9W
Datasheet: TPC8129,LQ(S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2573 ea
Line Total: USD 1.29 
Availability - 2143
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2143
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2573
50 : USD 0.2095
150 : USD 0.189
500 : USD 0.1635
2500 : USD 0.152
5000 : USD 0.1453

2282
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6325
10 : USD 0.4103
100 : USD 0.2783
500 : USD 0.2222
1000 : USD 0.2046
2500 : USD 0.1848
5000 : USD 0.1716
10000 : USD 0.1705

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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We are delighted to provide the TPC8129,LQ(S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC8129,LQ(S and other electronic components in the MOSFETs category and beyond.

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TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS) TPC8129TPC8129TPC8129TPC8129 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: R = 17 m (typ.) (V = -10 V) DS(ON) GS (3) Low leakage current: I = -10 A (max) (V = -30 V) DSS DS (4) Enhancement mode: V = -0.8 to -2.0 V (V = -10 V, I = -0.2 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -30 V DSS Gate-source voltage V -25/+20 GSS Drain current (DC) (Note 1) I -9 A D Drain current (pulsed) (Note 1) I -36 DP Power dissipation (t = 10 s) (Note 2) P 1.9 W D Power dissipation (t = 10 s) (Note 3) P 1.0 W D Single-pulse avalanche energy (Note 4) E 21 mJ AS Avalanche current I -9 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2010-07 2014-01-21 1 Rev.2.0TPC8129 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (t = 10 s) (Note 2) R 65.7 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 125 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: V = -24 V, T = 25 (initial), L = 0.2 mH, R = 25 , I = -9 A DD ch G AR Fig. Fig. 5.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. 5.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a) Board (b)Board (b) Board (a)Board (a) Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-21 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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