TPC8223-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8223-HTPC8223-HTPC8223-HTPC8223-H 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small, thin package (2) High-speed switching (3) Small gate charge: Q = 3.6 nC (typ.) SW (4) Low drain-source on-resistance: R = 17 m (typ.) (V = 4.5 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS (6) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 2010-10 2014-02-27 1 Rev.4.0TPC8223-H 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 9 A D Drain current (pulsed) (Note 1) I 36 DP Power dissipation (single operation) (t = 10 s) (Note 2), (Note 4) P 1.5 W D(1) Power dissipation (per device for dual (t = 10 s) (Note 2), (Note 5) P 1.1 D(2) operation) Power dissipation (single operation) (t = 10 s) (Note 3), (Note 4) P 0.75 D(1) Power dissipation (per device for dual (t = 10 s) (Note 3), (Note 5) P 0.45 D(2) operation) Single-pulse avalanche energy (Note 6) E 52 mJ AS Avalanche current I 9 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (single (t = 10 s) (Note 2), (Note 4) R 83.3 /W th(ch-a)(1) operation) Channel-to-ambient thermal resistance (per device for (t = 10 s) (Note 2), (Note 5) R 113 th(ch-a)(2) dual operation) Channel-to-ambient thermal resistance (single (t = 10 s) (Note 3), (Note 4) R 166 th(ch-a)(1) operation) Channel-to-ambient thermal resistance (per device for (t = 10 s) (Note 3), (Note 5) R 277 th(ch-a)(2) dual operation) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single operation, power is supplied to only one of the two devices.) Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power is evenly supplied to both devices.) Note 6: V = 24 V, T = 25 (initial), L = 0.5 mH, R = 1.2 , I = 9 A DD ch G AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-27 2 Rev.4.0