X-On Electronics has gained recognition as a prominent supplier of TPH11003NL,LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPH11003NL,LQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPH11003NL,LQ Toshiba

TPH11003NL,LQ electronic component of Toshiba
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Part No.TPH11003NL,LQ
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 30 V 32A (Ta) 1.6W (Ta), 21W (Tc) Surface Mount 8-SOP Advance (5x5)
Datasheet: TPH11003NL,LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3873 ea
Line Total: USD 1161.9 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4047
6000 : USD 0.4007
9000 : USD 0.3966
12000 : USD 0.3926
15000 : USD 0.3887
24000 : USD 0.3848
30000 : USD 0.381
45000 : USD 0.3771
75000 : USD 0.3733

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3873
6000 : USD 0.3462
15000 : USD 0.3333
30000 : USD 0.3217

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0056
10 : USD 0.8467
100 : USD 0.6489
500 : USD 0.5129
1000 : USD 0.4103

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0056
10 : USD 0.8467
100 : USD 0.6489
500 : USD 0.5129
1000 : USD 0.4103

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9418
10 : USD 0.9241
100 : USD 0.525
250 : USD 0.5168
500 : USD 0.4153
1000 : USD 0.3997
3000 : USD 0.3397
6000 : USD 0.3335
9000 : USD 0.3273

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the TPH11003NL,LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPH11003NL,LQ and other electronic components in the MOSFETs category and beyond.

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TPH11003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPH11003NLTPH11003NLTPH11003NLTPH11003NL 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 2.0 nC (typ.) SW (3) Low drain-source on-resistance: R = 12.6 m (typ.) (V = 4.5 V) DS(ON) GS (4) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS (5) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 32 A D Drain current (DC) (T = 25 ) (Note 1) I 11 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 63 DP Power dissipation (T = 25 ) P 21 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 D Power dissipation (t = 10 s) (Note 4) P 1.6 D Single-pulse avalanche energy (Note 5) E 29 mJ AS Avalanche current I 11 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2013-07 2014-02-17 1 Rev.2.0TPH11003NL 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 5.95 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 24 V, T = 25 (initial), L = 190 H, I = 11 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-17 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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