X-On Electronics has gained recognition as a prominent supplier of TPH4R50ANH,L1Q MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPH4R50ANH,L1Q MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPH4R50ANH,L1Q Toshiba

TPH4R50ANH,L1Q electronic component of Toshiba
TPH4R50ANH,L1Q Toshiba
TPH4R50ANH,L1Q MOSFETs
TPH4R50ANH,L1Q  Semiconductors

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Part No. TPH4R50ANH,L1Q
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET UMOSVIII 100V 93A 78W 58nC
Datasheet: TPH4R50ANH,L1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.869 ea
Line Total: USD 7.87 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 2.1612
10000 : USD 2.14
15000 : USD 2.1188
20000 : USD 2.0975
25000 : USD 2.0763
30000 : USD 1.9338
50000 : USD 1.9138
100000 : USD 1.895
250000 : USD 1.8762

0
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 5000
Multiples : 5000
5000 : USD 1.6303

0
Ship by Mon. 10 Mar to Wed. 12 Mar
MOQ : 1
Multiples : 1
1 : USD 7.869
10 : USD 2.8339
100 : USD 2.2796
500 : USD 1.8718
1000 : USD 1.4326
5000 : USD 1.4222

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Series
Transistor Type
Brand
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Typical Turn-Off Delay Time
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We are delighted to provide the TPH4R50ANH,L1Q from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPH4R50ANH,L1Q and other electronic components in the MOSFETs category and beyond.

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TPH4R50ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R50ANHTPH4R50ANHTPH4R50ANHTPH4R50ANH 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Small, thin package (2) High-speed switching (3) Small gate charge: Q = 22 nC (typ.) SW (4) Low drain-source on-resistance: R = 3.7 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (6) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative. Start of commercial production 2013-02 2019 2019-10-18 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0TPH4R50ANH 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 93 A D Drain current (DC) (T = 25) (Note 1) I 60 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 200 DP Power dissipation (T = 25) P 78 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 W D Power dissipation (t = 10 s) (Note 4) P 1.6 W D Single-pulse avalanche energy (Note 5) E 274 mJ AS Avalanche current I 60 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 1.60 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 60 A. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 60 V, T = 25 (initial), L = 0.082 mH, R = 1.0 , I = 60 A DD ch G AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2019 2019-10-18 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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