X-On Electronics has gained recognition as a prominent supplier of TPC8228-H,LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPC8228-H,LQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPC8228-H,LQ Toshiba

TPC8228-H,LQ electronic component of Toshiba
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Part No.TPC8228-H,LQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET PWR MOSFET PD=1.5W F=1MHZ
Datasheet: TPC8228-H,LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4158 ea
Line Total: USD 1.42 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4158
10 : USD 0.667
100 : USD 0.3622
500 : USD 0.2853
1000 : USD 0.2201
2500 : USD 0.1998
5000 : USD 0.187
10000 : USD 0.1699
25000 : USD 0.1646

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TPC8228-H,LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC8228-H,LQ and other electronic components in the MOSFETs category and beyond.

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TPC8228-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8228-HTPC8228-HTPC8228-HTPC8228-H 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications DC-DC Converters CCFL Inverters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small, thin package (2) High-speed switching (3) Small gate charge: Q = 2.6 nC (typ.) SW (4) Low drain-source on-resistance: R = 38 m (typ.) DS(ON) (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 2012-05 2014-01-07 1 Rev.2.0TPC8228-H 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 3.8 A D Drain current (pulsed) (Note 1) I 15.2 DP Power dissipation (single operation) (t = 10 s) (Note 2), (Note 4) P 1.5 W D(1) Power dissipation (per device for dual (t = 10 s) (Note 2), (Note 5) P 1.1 D(2) operation) Power dissipation (single operation) (t = 10 s) (Note 3), (Note 4) P 0.75 D(1) Power dissipation (per device for dual (t = 10 s) (Note 3), (Note 5) P 0.45 D(2) operation) Single-pulse avalanche energy (Note 6) E 10 mJ AS Avalanche current I 3.8 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (single (t = 10 s) (Note 2), (Note 4) R 83.3 /W th(ch-a)(1) operation) Channel-to-ambient thermal resistance (per device for (t = 10 s) (Note 2), (Note 5) R 113 th(ch-a)(2) dual operation) Channel-to-ambient thermal resistance (single (t = 10 s) (Note 3), (Note 4) R 166 th(ch-a)(1) operation) Channel-to-ambient thermal resistance (per device for (t = 10 s) (Note 3), (Note 5) R 277 th(ch-a)(2) dual operation) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single operation, power is supplied to only one of the two devices.) Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power is evenly supplied to both devices.) Note 6: V = 24 V, T = 25 (initial), L = 1.0 mH, I = 3.8 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-07 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TS4
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