TPCA8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCA8045-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications 0.4 0.1 1.27 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: Q = 23 nC (typ.) 1 SW A Low drain-source ON-resistance: R = 2.4 m (typ.) DS (ON) High forward transfer admittance: Y = 136 S (typ.) fs 5.0 0.2 Low leakage current: I = 10 A (max) (V = 40 V) DSS DS Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 1.0 mA) th DS D 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 4.25 0.2 Drain-source voltage V 40 V DSS Drain-gate voltage (R = 20 k) V 40 V DGR GS 8 5 Gate-source voltage V 20 V GSS DC (Note 1) I 46 D 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) I 138 DP JEDEC Drain power dissipation (Tc = 25 ) P 45 W D Drain power dissipation (t = 10 s) JEITA P 2.8 W D (Note 2a) TOSHIBA 2-5Q1A Drain power dissipation (t = 10 s) P 1.6 W D Weight: 0.069 g (typ.) (Note 2b) Single-pulse avalanche energy E 196 mJ AS (Note 3) Circuit Configuration Avalanche current I 46 A AR Repetitive avalanche energy 8 67 5 E 3.63 mJ AR (Tc = 25) (Note 4) T 150 C Channel temperature ch Storage temperature range T 55 to 150 C stg Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high 1 2 3 4 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-10 1 2013-11-01 6.0 0.3 0.95 0.05 0.6 0.1 5.0 0.2 0.166 0.05 0.8 0.1 3.5 0.2 1.1 0.2TPCA8045-H Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 C/W th (ch-c) (Tc = 25) Thermal resistance, channel to ambient R 44.6 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 78.1 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) TPCA Part number 8045-H Lot No. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 100 H, R = 25 , I = 46 A DD ch G AR Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2013-11-01