TGL2767 225 GHz Voltage Variable Attenuator General Description The TGL2767 is a wideband voltage-variable attenuator using Qorvo s production 0.15 um GaAs pHEMT process (QPHT15). Operating from 225GHz, the TGL2767 offers > 20 dB of attenuation range with < 2 dB insertion loss in the reference state. The TGL2767 s broadband performance allows it to be a single solution for a number of radar and communication bands as well as electronic warfare, instrumentation and other general RFbased applications. The TGL2767 is fully matched to 50 ohms and offered in a small 1.17 x 0.98 mm footprint. This along with using Product Features standard control and reference voltages, allows users to integrate the TGL2767 into their system with minimal Frequency Range: 225 GHz effort. Attenuation Range: 20 dB Insertion Loss (Ref. State): < 2 dB Control Voltage: 0.01.5 V Reference Voltage: 1.5 V Die Size: 1.17 x 0.98 x 0.10 mm Performance is typical across frequency. Please Functional Block Diagram reference electrical specification table and data plots for more details. Applications Voltage 1 4 RF Input RF Output Commercial and Military Radar Variable Electronic Warfare Attenuator Satellite Communications Point to Point Radio Instrumentation 2 3 General Purpose V V c S Ordering Information Part No. Description 225 GHz Voltage Variable Attenuator, TGL2767 Gel Pack, 100 pieces 225 GHz Voltage Var. Attenuator TGL2767 EVB Evaluation Board 225 GHz Voltage Var. Attenuator QPC2767S Space Inspected Version, Contact Sales. Data Sheet Rev C, April 15, 2021 Subject to change without notice 1 of 12 www.qorvo.com TGL2767 225 GHz Voltage Variable Attenuator Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Control Voltage (VC, VS) 3.0 V Control Voltage (VC) VC VS 01.5 V 1 Control Current (IC, IS) 3 mA Reference Voltage (V ) 1.5 V S Input Power (PIN) 30 dBm Operating Temperature Range -40 to +85 C Power Dissipation (PDISS) 1 W 1 Note: VS can be adjusted as needed to compensate for the Mounting Temperature (30 seconds) 320 C FET threshold variations among wafer/lots. Operating Channel Temperature 150 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Storage Temperature -55 to 150C recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions, unless otherwise noted: 25 C, V = 01.5 V, V = 1.5 V V V C S C S Parameter Min Typical Max Units Frequency Range 2 25 GHz Attenuation Range 20 dB Reference State Insertion Loss (VC = 1.5 V) <2.0 dB Input Return Loss >12 dB Output Return Loss >12 dB IIP3 (10 MHz tone spacing, P /Tone = 10 dBm) IN VC set for 0 dB >38 dBm VC set for 5 dB >25 dBm V set for 10 dB C >22 dBm VC set for 15 dB >22 dBm VC set for 20 dB >30 dBm Data Sheet Rev C, April 15, 2021 Subject to change without notice 2 of 12 www.qorvo.com