TQL9042 Ultra Low Noise Bypass LNA RFMD + TriQuint = Qorvo Applications Base Station Receivers Tower Mount Amplifiers Repeaters FDD-LTE, TDD-LTE, WCDMA General Purpose Wireless 10-pin 3x3 mm DFN Package Product Features Functional Block Diagram 5002000 GHz Operational Bandwidth Pin 1 Reference Mark Package Topside LNA with Integrated Bypass Mode Ability To Turn LNA and Bypass Mode OFF V 1 10 V Ultra Low Noise, 0.42 dB at 900 MHz CTRL2 CTRL1 19dB Gain N/C 2 9 N/C +36 dBm Output IP3 3 8 RF In RF Out +43 dBm Input IP3 in Bypass Mode N/C 4 7 N/C Internally Matched Positive Supply Only, +3.3 to +5V GND 5 6 V DD 3x3 mm 10-pin DFN Plastic Package Backside Pad - RF/DC GND General Description Pin Configuration The TQL9042 is a high-linearity, ultra-low noise gain Pin No. Label block amplifier with a bypass mode functionality 1 V CTRL2 integrated in the product. At 900 MHz, the amplifier 2, 4, 7, 9 N/C typically provides 19 dB gain, +36 dBm OIP3, and 0.42 3 RFin dB noise figure while drawing 70 mA current from a +5V 5 GND supply. The component also provides high linearity in the 6 VDD bypass mode with +43 dBm IIP3. 8 RFout The TQL9042 is internally matched using a high 10 VCTRL1 performance E-pHEMT process and only requires four Backside Paddle RF/DC GND external components for operation from a single positive supply: an external RF choke and blocking/bypass capacitors. This low noise amplifier contains an internal active bias to maintain high performance over temperature. The TQL9042 covers the 5002000 MHz frequency Ordering Information band and is targeted for wireless infrastructure. The TQL9042 is packaged in a 3x3mm and is pin Part No. Description compatible with the 1.52.7 GHz TQL9043 and 1.54.0 TQL9042 5002000 MHz Bypass LNA GHz TQL9044. TQL9042-PCB Evaluation Board Standard T/R size = 2500 pieces on a 7 reel Datasheet Rev. G 09-10-15 Disclaimer: Subject to change without notice - 1 of 10 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com TQL9042 Ultra Low Noise Bypass LNA RFMD + TriQuint = Qorvo Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to 150C Drain Voltage (V ) +3.3 +5.0 +5.25 V DD Drain Voltage (V ) +7 V Operating Temp. Range 40 +105 C DD 6 Input Power (CW) +22 dBm T (for>10 hrs MTTF) +190 C ch Operation of this device outside the parameter ranges Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all given above may cause permanent damage. recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V = +5 V, Temp.=+25C. DD Parameter Conditions Min Typ Max Units Operational Frequency Range 500 2000 MHz Test Frequency 900 MHz Gain Bypass OFF 17.5 19 20.5 dB Input Return Loss Bypass OFF 11 dB Output Return Loss Bypass OFF 20 dB Noise Figure Bypass OFF 0.42 0.8 dB Output P1dB Bypass OFF +23 dBm Bypass OFF, Output IP3 +30 +36 dBm Pout=+5 dBm/tone, f=1 MHz Insertion Loss Bypass ON 1 1.9 dB Return Loss Bypass ON 13 dB Bypass ON Input IP3 +43 dBm Pin=+6 dBm/tone, f=1 MHz Isolation LNA OFF, Bypass OFF -8.5 dB VIH 2.4 VDD V (1) Control Voltage, V , V 1 2 V 0 0.4 V IL Bypass OFF 40 70 110 mA Current, Id Bypass ON 3 4.5 mA Bypass to LNA Mode 483 900 ns (2) Switching Speed LNA to Bypass Mode 400 800 ns Thermal Resistance, Channel to case 100 C/W jc Notes: 1. The limits shown are true when using the external resistive divider values as shown on the Qorvo app board. 2. To achieve these fast switching speeds it is required to place a shunt 30K resistor at the RFout pin 8. Refer to pg. 6. Control Truth Table Control Voltage Limits (at device pins) VCTRL2 VCTRL1 State State Bias Condition 0 1 LNA OFF, Bypass OFF Low 0.1 V VCTRL1 High 0.52 V 1 1 LNA OFF, Bypass ON Low 0.4 V 0 0 LNA ON, Bypass OFF VCTRL2 High 1.3 V 1 0 Reserved (Do not use) Datasheet Rev. G 09-10-15 Disclaimer: Subject to change without notice - 2 of 10 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com