TQP3M9005 High Linearity LNA Gain Block Applications Repeaters Mobile Infrastructure LTE / WCDMA General Purpose Wireless 16-pin 3x3 mm QFN Package Product Features Functional Block Diagram 504000 MHz Pin 1 Reference Mark 15.3dB Gain at 1.9GHz 0.8dB Noise Figure at 1.9GHz 16 15 14 13 <1.5:1 I/O VSWR ( >14dB I/O Return Loss) 1 12 N/C N/C +34dBm Output IP3 2 11 RF In RF Out / V DD Top View +22.3dBm P1dB 3 10 N/C N/C 50Ohm Cascadable Gain Block 4 9 N/C N/C Unconditionally Stable 5 6 7 8 High Input Power Capability Single Supply, 50mA Current Backside Pad - RF/DC GND General Description Pin Configuration The TQP3M9005 is a high linearity low noise gain block Pin No. Label amplifier in a low-cost surface-mount package. At 1.9 2 RF In GHz, the amplifier typically provides 15.3dB gain, +34 11 RF Out / V DD dBm OIP3, and 0.8 dB Noise Figure while only drawing All Other Pins N/C 50 mA current. The device is housed in a Backside Pad RF/DC GND leadfree/green/RoHS-compliant industry-standard 16-pin 3x3mm QFN package. The TQP3M9005 has the benefit of having high linearity while also providing very low noise across a broad range of frequencies. This allows the device to be used in both receive and transmit chains for high performance systems. The amplifier is internally matched using a high performance E-pHEMT process and only requires an external RF choke and blocking/bypass capacitors for operation from a single supply. The internal active bias circuit also enables stable operation over bias and temperature variations. Ordering Information The TQP3M9005 covers the 0.054 GHz frequency Part No. Description band and is targeted for wireless infrastructure or other TQP3M9005 LNA Gain Block applications requiring high linearity and/or low noise TQP3M9005-PCB 0.54 GHz Evaluation Board figure. Standard T/R size = 2500 pieces on a 7 reel Datasheet: Rev G 01-11-16 Disclaimer: Subject to change without notice - 1 of 9 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com N/C N/C N/C N/C N/C N/C N/C N/CTQP3M9005 High Linearity LNA Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to 150C Device Voltage (V ) +3.0 +5.0 +5.25 V DD RF Input Power, CW, 50, T=25 C +20dBm T 40 +105 C CASE 6 Device Voltage (V ) +7V Tj for >10 hours MTTF +190 C DD Electrical specifications are measured at specified test Operation of this device outside the parameter ranges conditions. Specifications are not guaranteed over all given above may cause permanent damage. recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V =+5 V, Temp=+25C, 50 system DD Parameter Conditions Min Typ Max Units Operational Frequency Range 50 4000 MHz Test Frequency 1900 MHz Gain 13.9 15.3 16.9 dB Input Return Loss 12 dB Output Return Loss 14 dB Output P1dB +22.3 dBm Output IP3 Pout=+2 dBm/tone, f=1 MHz +30 +34 dBm Noise Figure 0.8 dB Current, I 35 50 68 mA DD Thermal Resistance, Junction to case 76.8 C/W jc Datasheet: Rev G 01-11-16 Disclaimer: Subject to change without notice - 2 of 9 - 2016 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com