TQP7M9106 2 Watt High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24 Pin 4x4 mm QFN Package Product Features Functional Block Diagram 501500 MHz +33 dBm P1dB at 940 MHz +50 dBm Output IP3 at 940 MHz 1 18 Vbias Iref 20.8 dB Gain at 940 MHz 2 17 GND/NC GND/NC +5V Single Supply, 455 mA Current 3 16 GND/NC RFout/Vcc Patented internal RF overdrive protection 4 15 RFin RFout/Vcc Patented internal DC overvoltage protection 5 14 RFin RFout/Vcc On chip ESD protection 6 13 GND/NC GND/NC Shut-down capability Capable of handling 10:1 VSWR at Vcc=+5 V, 0.9 GHz, 33 dBm CW Pout or 23.5 dBm WCDMA Pout General Description Pin Configuration The TQP7M9106 is a high linearity, high gain 2W Pin No. Symbol driver amplifier in industry standard, RoHS compliant, 1 Vbias QFN surface mount package. This InGaP/GaAs HBT 4, 5 RFin delivers high performance across 0.05 to 1.5 GHz 14, 15, 16 RFout/Vcc range of frequencies while achieving 20.8 dB gain, +50 18 Iref dBm OIP3 and +33 dBm P1dB at 940MHz while only 2, 3, 6-13, 17, 19-24 GND/NC consuming 455 mA quiescent current. All devices are 100% RF and DC tested. The TQP7M9106 incorporates patented on-chip circuit techniques that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. Ordering Information The TQP7M9106 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, Part No. Description medium power, and high efficiency are required. The TQP7M9106 2 W High Linearity Amplifier device is an excellent candidate for transceiver line TQP7M9106-PCB900 920960 MHz Evaluation Board cards and high power amplifiers in current and next Standard T/R size = 2500 pieces on a 13 reel. generation multi-carrier 3G / 4G base stations. Datasheet: Rev D 01-24-13 - 1 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint 7 24 GND/NC GND/NC 8 23 GND/NC GND/NC 9 22 GND/NC GND/NC 10 21 GND/NC GND/NC 11 20 GND/NC GND/NC 12 19 GND/NC GND/NC TQP7M9106 2 Watt High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -65 to 150C Device Voltage (V ) 4.75 5.0 5.25 V CC RF Input Power, CW, 50, T=25 C +30 dBm Case Temperature -40 +85 C 6 Device Voltage (V ) +8 V Tj for >10 hours MTTF +170 C CC Operation of this device outside the parameter ranges Electrical specifications are measured at specified test given above may cause permanent damage. conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: V =+5 V, Temp= +25C, tuned application circuit CC Parameter Conditions Min Typ Max Units Operational Frequency Range 50 1500 MHz Test Frequency 940 MHz Gain 19 20.8 22 dB Input Return Loss 9.2 dB Output Return Loss 12.7 dB Output P1dB 32 +33.1 dBm Output IP3 Pout = +17 dBm/tone, f = 1 MHz +46 +50.3 dBm (1) WCDMA Channel Power ACLR=-50 dBc +23.5 dBm Noise Figure 4.8 dB Quiescent Current (I ) 360 455 510 mA CQ Reference Current (I ) 8.9 mA ref Thermal Resistance, Junction to case 17.2 C/W jc Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob. Datasheet: Rev D 01-24-13 - 2 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint