TQP369184
DC 6 GHz Gain Block
RFMD + TriQuint = Qorvo
Applications
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
SOT-363 Package
General Purpose Wireless
Product Features Functional Block Diagram
DC6000 MHz
Flat, broadband frequency response
20.3 dB Gain at 1900 MHz
3.9 dB Noise Figure at 1900 MHz
+28.5 dBm Output IP3 at 1900 MHz
+15.5 dBm P1dB at 1900 MHz
50 Ohm Cascadable Gain Block
Single Supply, 45 mA Current
SOT-363 Package
General Description Pin Configuration
The TQP369184 is a general-purpose buffer amplifier
Pin No. Label
that offers high dynamic range in a low-cost surface-
3 RF IN
mount package. At 1900MHz, the amplifier typically
6 RF OUT
provides 20.3 dB gain, +28.5 dBm OIP3, and 3.9 dB
1, 2, 4, 5 GND
Noise Figure while drawing 45 mA current. The device
combines dependable performance with consistent
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85C. The device is housed
in a lead-free/green/RoHS-compliant industry-standard
SOT-363 package.
The TQP369184 consists of a Darlington-pair amplifier
using the high reliability InGaP/GaAs HBT process
technology. Only DC-blocking capacitors, a bias
resistor, and an inductive RF choke are required for
operation.
This broadband MMIC amplifier can be directly applied
to various current and next generation wireless
Ordering Information
technologies such as CDMA, W-CDMA, and LTE. In
addition, the TQP369184 will work for other applications
Part No. Description
within the DC to 6 GHz frequency range.
TQP369184 InGaP/GaAs HBT Gain Block
TQP369184-PCB 500-6000 MHz Evaluation Board
Standard T/R size = 3000 pieces on a 7 reel
Datasheet Rev. F 06-21-15 Disclaimer: Subject to change without notice
- 1 of 8 -
2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com
TQP369184
DC 6 GHz Gain Block
RFMD + TriQuint = Qorvo
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Rating Parameter Min Typ Max Units
Storage Temperature 55 to 150C T 40 +105 C
CASE
6
RF Input Power, CW, 50, T=25 C +24dBm Tj for >10 hours MTTF +160 C
Device Voltage (V ) +4.5V Electrical specifications are measured at specified test
CC
conditions. Specifications are not guaranteed over all
Operation of this device outside the parameter ranges
recommended operating conditions.
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: I =45mA, T = +25C, 50 system
CC CASE
Parameter Conditions Min Typ Max Units
Operational Frequency Range DC 6000 MHz
Test Frequency 1900 MHz
Gain 18.8 20.3 21.8 dB
Input Return Loss 15 dB
Output Return Loss 24 dB
Output P1dB +15.5 dBm
Output IP3 Pout=0dBm/tone, f= 1MHz +25.5 +28.5 dBm
Noise Figure 3.9 dB
Device Voltage(VCC) 3.0 3.9 4.5 V
Device Current(ICC) 45 mA
(1)
Thermal Resistance(jc) Junction to case 226 C/W
Notes:
1. Thermal path is from the device junction through the package ground tab (pins 2,4) to the backside mounting
surface.
Datasheet Rev. F 06-21-15 Disclaimer: Subject to change without notice
- 2 of 8 -
2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com