VG111 1.7 2.7 GHz Variable Gain Amplifier Product Information Product Features Product Description Functional Diagram The VG111 is a 1.7-2.7GHz high dynamic range variable 1.7 2.7 GHz bandwidth gain amplifier (VGA) packaged in a low profile Pb-free / 7 6 5 4 3 2 1 26.6 dB Attenuation Range GND 8 RoHS-compliant surface-mount leadless package that 28 GND +39.5 dBm Output IP3 measures 6 x 6 mm square. GND 9 27 GND +22 dBm P1dB GND 10 GND 26 Amp The +22 dBm output compression point and +39.5 dBm RF IN Constant IP3 & P1dB over 11 25 RF OUT output intercept point of the amplifier are maintained over GND attenuation range 12 GND 24 the entire attenuation range, making the VG111 ideal for Variable Attenuator GND 13 use in transmitter and receiver AGC circuits and as a 23 GND Single voltage supply variable gain stage following an LNA in high dynamic GND 14 GND 22 Pb-free 6mm 28-pin QFN package range receiver front ends. 15 16 17 18 19 20 21 MTTF > 1000 years Superior thermal design allows the product to have a minimum MTTF rating of 1000 years at a mounting Applications temperature of +85 C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surface- Xmit & Rcv AGC circuitry for mount assembly. mobile infrastructure (1) Specifications Typical Performance Parameter Unit Min Typ Max Parameter Units Typical (1) Operational Bandwidth MHz 1700 2700 Frequency MHz 1900 2140 2600 (1) Test Frequency MHz 1900 Gain at min. attenuation dB 14 13.3 8.1 Gain at min. attenuation dB 12 14 Input Return Loss dB 12 14 6.8 Input Return Loss dB 12 Output Return Loss dB 11 14 10.5 Output Return Loss dB 11 Output P1dB dBm +22 +22 +21 (2) Output P1dB dBm +22 Output IP3 dBm +39.5 +39.5 +39.5 (2) Output IP3 dBm +37 +39.5 Noise Figure at min. attenuation dB 4.3 4.5 Noise Figure at min. attenuation dB 4.3 Gain Variation Range dB 26.6 26.6 33.6 (3) Gain Variation Range dB 23.5 26.6 32.5 Supply Voltage V +5 Group Delay ns 0.6 Amplifier Current, Pin25 mA 150 Supply Voltage V +5 Amplifier Current, Pin 25 mA 120 150 180 Gain Control Voltage, V V 0 4.5 CTRL Gain Control Current, VcTRL=4.5V mA 20 1. Test conditions unless otherwise noted: 25C, Vdd = +5 V in a tuned application circuit. Vctrl is the control voltage through a BJT transistor and a 100 dropping resistor as shown in the same application circuit. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 1.9 GHz. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +125 C Amplifier Supply Voltage (pin 25) +6 V Part No. Description Pin 5 (Gain Control) Current 30 mA 1.7-2.7GHz Variable Gain Amplifier VG111-F RF Input Power (continuous) +12 dBm (lead-free/RoHS-compliant QFN package) Junction Temperature, Tj +160 C VG111-PCB1900 1.8 2.0 GHz Fully Assembled Application Board VG111-PCB2100 2.0 2.2 GHz Fully Assembled Application Board Thermal Resistance, Rth 59 C / W Standard T/R size = 500 pieces on a 7 reel. Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 7 January 2009 GND GND GND GND GND Gain Ctrl GND GND GND GND GND GND GND GND VG111 1.7 2.7 GHz Variable Gain Amplifier Product Information Application Circuit: 1.8 2.0 GHz (VG111-PCB1900) Circuit Board Material: .014 FR-4, 4 layers, .062 total thickness Bill of Materials Ref. Des. Description Size C1, C7 47 pF Chip Capacitor 0603 C2, C5 Do Not Place C3, C4 0.01 F Chip Capacitor 0603 C6 0.5 pF Chip Capacitor 0603 The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. L1, L2 22 nH Chip Inductor 0603 Components shown in the silkscreen but not on the schematic are not used for this circuit. R1 100 Chip Resistor 0603 Distances are shown from the edge-to-edge for the land pattern. R2 2.2 Chip Resistor 0603 Q1 MMBT2222 Motorola Transistor SOT-23 U1 VG111 Variable Gain Amplifier QFN 6x6 OIP3 vs. Output Power OIP3 vs. Attenuation Setting ACPR vs. Channel Power 1960 MHz, IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW, 25C frequency = 1900, 1901 MHz, 0dB Atten. frequency = 1900, 1901 MHz, +10 dBm/tone, +25 C -40 45 45 40 40 -50 35 35 0dB Attn -60 2.5dB Attn 30 30 5dB Attn 10dB Attn +25C -40C +85C -70 25 25 10 11 12 13 14 15 16 -4 0 4 8 12 16 0 2 4 6 8 10 Output Power (dBm) Attenuation (dB) Output Channel Power (dBm) Gain vs. Pin 5 Attn. Control Current Normalized Gain vs. Pin 5 Control Current 20 35 +25C -40C +85C +25C -40C +85C 15 30 10 25 5 20 0 15 -5 10 -10 5 -15 -20 0 0 5 10 15 20 25 0.1 1.0 10.0 100.0 Pin 5 Attenuation Control Current (mA) Pin 5 Attenuation Control Current (mA) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 2 of 7 January 2009