X-On Electronics has gained recognition as a prominent supplier of HMC-AUH312 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. HMC-AUH312 RF Amplifier are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

HMC-AUH312 Analog Devices

HMC-AUH312 electronic component of Analog Devices
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Part No. HMC-AUH312
Manufacturer: Analog Devices
Category: RF Amplifier
Description: RF Amplifier GaAs HEMT WBand Driver amp, DC - 65 GHz
Datasheet: HMC-AUH312 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 240.6876 ea
Line Total: USD 2406.88 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
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0
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 10
Multiples : 10
10 : USD 240.6876

   
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We are delighted to provide the HMC-AUH312 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HMC-AUH312 and other electronic components in the RF Amplifier category and beyond.

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0.5 GHz to 80 GHz, GaAs, HEMT, MMIC, Low Noise Wideband Amplifier Data Sheet HMC-AUH312 FEATURES FUNCTIONAL BLOCK DIAGRAM Small signal gain: >8 dB 2 80 GHz distributed amplifier V 1 GG Configurable with or without bias tees for V and V 1 bias DD GG HMC-AUH312 Low power dissipation RFIN/V 1 GG 1 300 mW with bias tee at V = 5 V DD 360 mW without bias tee at V = 6 V DD RFOUT/ 480 mW without bias tee at V = 8 V V DD DD 3 Die size: 1.2 mm 1.0 mm 0.1 mm V V 2 DD GG APPLICATIONS 5 4 Fiber optic modulator drivers Figure 1. Fiber optic photoreceiver postamplifiers Low noise amplifier for test and measurement equipment Point to point and point to multipoint radios Wideband communication and surveillance systems Radar warning receivers GENERAL DESCRIPTION The HMC-AUH312 is a gallium arsenide (GaAs), monolithic The amplifier die occupies 1.2 mm 1.0 mm, facilitating easy microwave integrated circuit (MMIC), HEMT, low noise, integration into a multichip module (MCM). The HMC-AUH312 wideband amplifier die that operates between 500 MHz and can be used with or without a bias tee, and requires off-chip 80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The blocking components and bypass capacitors for the dc supply amplifier provides 10 dB of small signal gain and a maximum lines. Adjustable gate voltages allow for gain adjustment. output amplitude of 2.5 V p-p, which makes it ideal for use in broadband wireless, fiber optic communications, and test equipment applications. Rev. F Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. Tel: 781.329.4700 2019 Analog Devices, Inc. All rights reserved. No license is granted by implication or otherwise under any patent or patent rights of Analog Technical Support www.analog.com Devices. Trademarks and registered trademarks are the property of their respective owners. 13476-001HMC-AUH312 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Theory of Operation ...................................................................... 11 Applications ....................................................................................... 1 Applications Information .............................................................. 12 Functional Block Diagram .............................................................. 1 Applications Overview .............................................................. 12 General Description ......................................................................... 1 Device Mounting ........................................................................ 14 Revision History ............................................................................... 2 Device Operation ....................................................................... 14 Specif icat ions ..................................................................................... 3 Mounting and Bonding Techniques for Millimeterwave GaAs MMICs ............................................................................................. 15 0.5 GHz to 60 GHz Frequency Range ........................................ 3 Handling Guidelines for ESD Protection of GaAs MMICs ........ 15 60 GHz to 80 GHz Frequency Range ......................................... 3 Handling Precautions ................................................................ 15 Recommended Operating Conditions ...................................... 3 Mounting Techniques ................................................................ 16 Absolute Maximum Ratings ............................................................ 5 Wire Bonding .............................................................................. 16 ESD Caution .................................................................................. 5 Outline Dimensions ....................................................................... 17 Pin Configuration and Function Descriptions ............................. 6 Ordering Guide .......................................................................... 17 Interface Schematics..................................................................... 7 Typical Performance Characteristics ............................................. 8 REVISION HISTORY 11/2019Rev. E to Rev. F Changes to Table 6 ............................................................................. 6 Change to Voltage Parameter, Table 4 ........................................... 4 Added Interface Schematics Section ............................................... 7 Changes to Figure 3 ........................................................................... 7 11/2015v04.0615 to Rev. E Changes to Figure 14, Figure 16, and Figure 19 ............................ 9 Changes to Figure 20...................................................................... 10 This Hittite Microwave Products data sheet has been reformatted Added Theory of Operation Section and Figure 21 .................. 11 to meet the styles and standards of Analog Devices, Inc. Added Applications Information Section and Applications Updated Format .................................................................. Universal Overview Section............................................................................ 12 Changes to Title of Data Sheet ............................................... Page 1 Changes to Figure 24 and Figure 25 ............................................ 13 Change Vg1 to V 1, Vg2 to V 2, Vd to V , RFIN to GG GG DD Changes to Device Power-Up Instructions Section and Device RFIN/V 1, and RFOUT to RFOUT/V .................. Throughout GG DD Power-Down Instructions Section ............................................... 14 Changes to General Description Section ...................................... 1 Added Handling Guidelines for ESD Protection of GaAs MMICs Changes to Gain Parameter, Table 2 .............................................. 3 Section and Opening the Protective Packaging Section ................ 15 Changes to Power Dissipation Parameter and Operating Changes to Handling Precautions Section .................................. 15 Temperature Parameter, Table 3 ..................................................... 3 Changes to Mounting Techniques Section ................................. 16 Changes to Power Dissipation Parameter and Operating Updated Outline Dimensions ....................................................... 17 Temperature Parameter, Table 4 ..................................................... 4 Changes to Ordering Guide .......................................................... 17 Changes to Table 5 ............................................................................ 5 Added Figure 2, Renumbered Sequentially .................................. 6 Rev. F Page 2 of 17

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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