ALM-80110 0.25W Analog Variable Gain Amplifier Data Sheet Description Features Avago Technologies ALM-80110 is a 0.25W Analog Con- Halogen free trolled Variable Gain Amplifier which operates from 0.4GHz Wide Gain Control Range to 1.6GHz. The device provides an exceptionally high OIP3 High OIP3 across attenuation range level of 40dBm, which is maintained over a wide attenu- ation range. The device features wide gain control range, Specifications low current, excellent input and output return loss. At 0.9GHz, V = 5V, I = 110mA (typ), V = 4V, V = 5V dd total bias ctrl 3 The ALM-80110 is housed in a miniature 5.0X5.0X1.1 mm , 25C 10-lead multiple-chips-on-board (MCOB) module package. OIP3 = 40.5dBm This part is suitable for the AGC/Temperature compensa- tion circuits application in wireless infrastructure such Noise Figure = 4.8dB as Cellular/PCS/W-CDMA/WLLand and new generation Gain = 13.5dB wireless technologies systems. P1dB = 23.2dBm Pin connections and Package Marking IRL = 17dB, ORL = 12dB Attenuation Range = 40dB Application 80110 WLL, WLAN and other applications in the 400MHz to WWYY 1.6GHz range. XXXX Transmitter and Receiver Gain Control Temperature Compensation Circuitry Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 100 V ESD Human Body Model = 650 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Vdd 6 RFout RFin 1 C C C L C C C RFin RFout Note : Top View : Package marking provides orienation and identification Vctrl Vbias 80110 = Device Code WWYY = Workweek and Year Code Figure 1. Simplified Schematic diagram XXXX = Assembly Lot number 7 Vctrl GND 5 8 GND GND 4 Vbias 3 9 EXT Lout Not used 2 10 Not used (1) ALM-80110 Absolute Maximum Rating T = 25C (2,3) C Thermal Resistance (V = 5.0V) = 77.2C/W d jc Symbol Parameter Units Absolute Maximum Notes: I Drain Current mA 140 d,max 1. Operation of this device in excess of any of these limits may cause permanent damage V Drain Voltage, V 5.5 d.,max 2. Derate 12.95mW/C for TL > 86C RF output to ground 3. Thermal resistance measured using 150C Infra-Red Microscopy Technique. V Control Voltage V 7 ctrl max 4. Max rating for Pin is under Maximum V Biasing Voltage V 15 Attenuation mode i.e. Vctrl = 1V. bias max P Power Dissipation mW 770 d 4 P CW RF Input Power dBm 26 in T Junction Temperature C 150 j T Storage Temperature C -65 to 150 STG (1) ALM-80110 Electrical Specification T = 25C, Z = 50, V = 5.0V, V = 4.0V, V = 5.0V unless noted C o dd bias ctrl Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. stdev I Total Operating Current Range N/A mA 89 110 134 0.002 total NF Noise Figure at minimal Attenuation 0.45GHz 5.5 0.7GHz dB 4.7 0.9GHz 4.8 5.4 0.090 Gain Gain at minimal Attenuation 0.45GHz 17 0.7GHz dB 15 0.9GHz 12 13.5 15 0.165 (2) OIP3 Output Third Order Intercept Point 0.45GHz 40 0.7GHz dBm 40 0.9GHz 36 40.5 0.717 P1dB Output Power at 1dB Gain Compression 0.45GHz 23.5 0.7GHz dBm 23.3 0.9GHz 22 23.2 0.068 IRL Input Return Loss 0.45GHz 12 0.7GHz dB 20 NA 0.9GHz 17 ORL Output Return Loss 0.45GHz 10 0.7GHz dB 10.5 NA 0.9GHz 12 ISO Isolation 0.45GHz 30.5 0.7GHz dB 30.5 NA 0.9GHz 30.5 Vbias Attenuator Bias Voltage N/A V 2.7 4 5 NA Vctrl Gain Variation Control Voltage N/A V 1 5 NA Gain Gain Variation Range (from Vctrl=1V to 5V) 0.45GHz 46 0.7GHz dB 43 NA 0.9GHz 40 Note : 1. Measurements obtained from a test circuit described in Figure 53. 2. OIP3 test condition: F1 F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band. 3. Standard deviation data are based on at least 1000 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower specification limits. 2