WJA1510 +5V Active-Bias InGaP HBT Gain Block Product Features Product Description Functional Diagram GND The WJA1510 is cascadable gain block that offers high Cascadable gain block linearity in a low-cost surface-mount package. At 200 4 50 1000 MHz MHz, the WJA1510 typically provides 14 dB gain, +47 14 dB Gain dBm OIP3, and +20 dBm P1dB. The device is housed in a RoHS-compliant SOT-89 industry-standard SMT package +20 dBm P1dB using a NiPdAu plating to eliminate the possibility of tin +47 dBm OIP3 whiskering. 1 23 +61 dBm OIP2 The WJA1510 consists of Darlington pair amplifiers using RF IN GND RF OUT Operates from +5V 95mA a high reliability InGaP/GaAs HBT process technology. Robust 1000V ESD, Class 1C The MMIC amplifier is internally matched to 50 and only Function Pin No. requires DC-blocking capacitors and a bias inductor for RoHS-compliant SOT-89 package Input 1 operation. An internal active bias is designed to enable Output/Bias 3 stable performance over temperature. A dropping bias Ground 2, 4 resistor is not required allowing the device to be biased Applications directly from +5V supply voltage. IF Amplifier The amplifier is targeted for high performance IF applications VHF/UHF Transmission in existing and next generation wireless technologies. The Wireless Infrastructure WJA1510 is ideal for general purpose applications such as LO buffering, IF amplifier and pre-driver stages within the 50 to General Purpose 1000 MHz frequency range. CATV / FTTH (1) (3) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz 50 1000 Frequency MHz 70 170 240 500 900 Test Frequency MHz 200 S21 dB 15.0 14.3 14.2 14.1 13.8 Gain dB 12.8 14.4 15.8 S11 dB -10 -11 -12 -13 -16 Input Return Loss dB 11 S22 dB -20 -17 -16 -17 -15 Output Return Loss dB 16 Output P1dB dBm +19.6 +19.7 +19.8 +19.8 19.6 (2) Output P1dB dBm +19.8 Output IP3 dBm +41.6 +48.0 +52.5+40.8+36.1 (2) Output IP3 dBm +40 +47.0 Output IP2 dBm 60.1 61.4 61.2 64.1 64.2 Output IP2 dBm +61.2 Noise Figure dB 5.2 5.3 5.4 5.6 6 Noise Figure dB 5.4 3. Listed typical performance parameters measured on evaluation board Device Voltage V 5 Device Current mA 82 95 102 1. Test conditions: 25 C, Supply Voltage = +5 V, 50 System. S-parameters and 3OIP measured at device pins. All other specifications measured on evaluation board. 2. 3OIP measured with two tones at an output power of 8 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +150 C Supply Voltage +6.5 V Part No. Description Input Power +24 dBm +5V Active Bias InGaP HBT Gain Block WJA1510 (junction to paddle) 78 C / W jc (lead-free/green/RoHS-compliant SOT-89 Package) Maximum Junction Temperature 150 C WJA1510-PCB 50 1000 MHz Fully Assembled Eval. Board Operation of this device above any of these parameters may cause permanent damage. Standard Tape / Reel size = 1000 pieces on a 7 reel Specifications and information are subject to change without notice Triquint Semiconductor Inc. Phone 1-800-WJ1-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 4 October 2008 WJA1510 +5V Active-Bias InGaP HBT Gain Block Typical Evaluation Board RF Performance Supply Bias = +5V, I = 95 mA cc 1. Test conditions: T = 25 C, Supply Voltage = +5 V, Icc = 95 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of 8 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Return Loss Noise Figure vs. Frequency Gain vs. Frequency T=25C 10 20 0 9 -5 18 8 -10 7 16 6 -15 14 5 -20 4 12 -40C +25C +85C -25 -40C +25C +85C S11 S22 3 2 -30 10 0 200 400 600 800 1000 0 500 1000 1500 2000 0 200 400 600 800 1000 Frequency (MHz) Frequency (MHz) Frequency (MHz) Gain vs. Pout OIP3 vs. Vcc OIP3 vs. Frequency Freq = 200 MHz Pout =8 dBm/tone 50 20 55 50 45 18 45 40 16 40 35 14 35 30 12 30 -40C +25C +85C 10 25 25 10 12 14 16 18 20 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 0 200 400 600 800 1000 Pout (dBm) Frequency (MHz) Vcc (V) P1dB vs. Vcc P1dB vs. Frequency OIP2 vs. Frequency Pout = 4 dBm/tone 22 22 75 20 70 21 18 65 16 20 60 14 55 19 12 50 -40C +25C +85C 10 45 18 4.7 4.8 4.9 5 5.1 5.2 0 200 400 600 800 1000 0 200 400 600 800 1000 Frequency (MHz) Vcc (V) Frequency (MHz) Icc vs. Vcc Icc vs. Temperature Vcc = +5V 160 100 140 95 120 90 100 80 85 60 80 40 -40C +25C +85C 75 20 -50 -25 0 25 50 75 100 4.0 4.5 5.0 5.5 6.0 Temperature (C) Vcc (V) Specifications and information are subject to change without notice Triquint Semiconductor Inc. Phone 1-800-WJ1-4401 FAX: 408-577-6633 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 2 of 4 October 2008 OIP2 (dBm) Gain (dB) Gain (dB) Icc (mA) P1dB (dBm) OIP3 (dBm) S11, S22 (dB) Icc (mA) NF (dB) P1dB (dBm) OIP3 (dBm)