Gain (dB) CHA4107-QDG C-band Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4107-QDG is a monolithic two-stage GaAs medium power amplifier designed for C-Band applications. UMS UMSUMSUMSUMSUMSUMS The MPA provides typically 25.5dBm output A4107 A3688AA3688AA3667AA3667AA3667AA3667A power associated to 30% power added YYWW efficiency at 1dB gain compression. YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG It is supplied in RoHS compliant SMD package. Main Features 45 25 43 23 41 39 21 Frequency band: 4.5-6.5GHz 37 19 35 Output power: 25.5dBm 1dBcomp 33 17 31 Linear gain: 22.5dB 15 29 27 13 High PAE: 30% 1dBcomp 25 11 Quiescent bias point: Vd=8V, Id=120mA 23 PAE 1dBc Temp=25C 21 9 24L-QFN4x4 19 Pout 1dBc Temp=25C 7 17 Linear Gain Temp=25C MSL3 15 5 4 4.5 5 5.5 6 6.5 Frequency (GHz) Main Characteristics Tamb = 25C, Vd = 8V, Id (Quiescent) = 120mA, Drain Pulse width= 50s, Duty cycle = 10% Symbol Parameter Min Typ Max Unit Fop Operating frequency range 4.5 6.5 GHz PAE P-1dB Power added efficiency 1dBcomp & 25C 30 % P-1dB Output power 1dBcomp 25C 25.5 dBm Ref. : DSCHA4107-QDG4188 - 07 Jul 14 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Pout (dBm) & PAE (%) CHA4107-QDG C-band Medium Power Amplifier Electrical Characteristics Tamb = +25C, Vd = 8V, Id (Quiescent) = 120mA, Drain Pulse width = 50s, Duty cycle = 10% Symbol Parameter Min Typ Max Unit 4.5 6.5 GHz Fop Operating frequency 22.5 dB G Small signal gain RLin Input Return Loss 14 8 dB 10 8 dB RLout Output Return Loss 25.5 dBm P Output power 1dBcomp -1dB 30 % PAE P Power Added Efficiency 1dBcomp -1dB 145 mA Id P Supply drain current 1dBcomp -1dB P Output power 3dBcomp 26 dBm -3dB 36 % PAE P Power Added Efficiency 3dBcomp -3dB 160 mA Id P Supply drain current 3dBcomp -3dB Vd1, Vd2 Drain supply voltage 8 V (1) 120 mA Id Supply quiescent current -0.8 V Vg Gate supply voltage (1) Parameter can be adjusted by tuning of Vg. (1) Absolute Maximum Ratings Tamb.= +25C Symbol Parameter Values Unit (2) Cmp Compression level 6 dB (3) Vd Supply voltage 9.5 V Id Supply quiescent current 170 mA Id sat Supply current in saturation 200 mA Vg Supply voltage -3.0 -0.4 V Tj Maximum junction temperature 175 C Tstg Storage temperature range -55 to +150 C Top Operating temperature range -40 to +85 C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) For higher compression the level limit can be increased by decreasing the voltage Vd using the rate 0.5V/dB of gain compression. (3) Without RF input power. Ref. : DSCHA4107-QDG4188 - 07 Jul 14 2/12 Specifications subject to change without notice Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34