YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG A3667AA3688AA3688AA3667AA3667AA3667A UMSUMSUMSUMSUMSUMS UMSUMSUMSUMSUMSUMS A3667AA3667AA3667AA3688AA3688AA3667A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG CHA4220-QGG 0.5-20GHz Driver GaAs Monolithic Microwave IC Description The CHA4220-QGG is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide range of applications, such as electronic warfare, X YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG and Ku Point to Point Radio, and test UMS UMSUMSUMSUMSUMSUMS instrumentation. A3667AA3667AA3688AA3667AA3667AA3688A UMSUMSUMSUMSUMSUMS The circuit is manufactured using a 0.25m A3688AA3667AA3667AA3688AA3667AA3667AA42UMSUMSUMSUMSUMSUMS20 A3667AA3688AA3667AA3667AA3667AA3688A gate length power pHEMT process, with via YYWW YYWWGYYWWGYYWWGYYWWGYYWWGYYWWGYYWWGYYWWGYYWWGYYWWGYYWWGYYWWG holes through the substrate, air bridges and optical gate lithography. The part is supplied as 5x5 QFN package with input and output RF accesses matched to 50 ohms. Main Features Broadband performances: 0.5-20GHz Performance Typical Linear Gain: 17dB 30 P1dB: 20dBm 25 Psat: 23dBm 20 OIP3: 28dBm 15 Typical Noise Figure: 3dB P1dB (dBm) DC bias: Idq=120mA Vd=6.5V 10 Linear Gain (dB) Psat (dBm) With Vg1 -0.3V and Vg2=1.5V. 5 NF(dB) 28L QFN 5x5 0 MSL3 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) UMSUMSUMSUMSUMSUMS Main Electrical Characteristics Tamb.= +25C Symbol Parameter Min Typ Max Unit Freq Frequency range 0.5 20 GHz Gain Linear Gain 17 dB NF Noise Figure 3 dB Pout Output Power 1dB comp. 20 dBm Ref. : DSCHA4220-QGG-5070 - 11 Mar 15 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 A3667AA3688AA3667AA3667AA3667AA3688A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG Gain, NF / P1dB, Pout YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG A3667AA3667AA3688AA3667AA3667AA3688A UMSUMSUMSUMSUMSUMS UMSUMSUMSUMSUMSUMS A3667AA3688AA3667AA3667AA3688AA3667A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG A3667AA3688AA3688AA3667AA3667AA3667A UMSUMSUMSUMSUMSUMS UMSUMSUMSUMSUMSUMS A3667AA3667AA3667AA3667AA3688AA3688A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG0.5-20GHz Driver CHA4220-QGG Electrical Characteristics Tamb.= +25C,Vg1 to be set in order to have Idq=120mA, Vg2=1.5V Symbol Parameter Min Typ Max Unit Freq Frequency range 0.5 20 GHz Gain Linear Gain 17 dB NF Noise Figure 3 dB IRL Input Return Loss 15 dB ORL Output Return Loss 18 dB P1dB Output power for 1dB Gain Compression 20 dBm Psat Saturated output power 23 dBm OIP3 Output Third Order Intercept 28 dBm Idq Quiescent current on Vd 120 mA Vd Supply voltage on Vd 6 6.5 7 V Id Drain current 3dB gain compression 140 mA The values are representative of typical test fixture measurements as defined on the drawing in paragraph Proposed Evaluation Board. Typical Bias Conditions Tamb.= +25C Symbol Pin Parameter Values Unit Vg1 12 Gate control1 for the amplifier -0.3 V Vg2 1 Gate control2 for the amplifier 1.5 V Vd 19 Drain Voltage (see application circuit p10) 6.5 V The associated drain current with no RF input power is Idq=120mA This typical bias is recommended in order to get the best compromise between output power, linearity and Noise Figure performance vs. Temperature. Ref. : DSCHA4220-QGG-5070 - 11 Mar 15 2/16 Specifications subject to change without notice Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34