2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP18E A Microchip Technology Company Data Sheet The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE 802.11b/g/n/ac applications. It typically provides 25 dB gain with 32% power-added efficiency, while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP18E can be configured for high-linearity for 802.11ac operation or for high-power, high-efficiency operation. This power amplifier also features easy board-level usage along with high- speed power-up/down control through a single reference voltage pin and is offered in a 8-contact XSON package. Features High gain: Low shut-down current (~2 A) Typically 25 dB gain across 2.4~2.5 GHz Limited variation over temperature High linear output power: ~1 dB gain/power variation between -20C to +85C >26 dBm P1dB Excellent on-chip power detection - Single-tone measurement - Please refer to Absolute Maximum Stress Ratings on >15 dB dynamic range on-chip power detection page 5 Temperature and VSWR insensitive Meets 802.11g OFDM ACPR requirement up to 21.5 dBm Simple output matching Meets 802.11b ACPR requirement up to 22.5 dBm ~3% added EVM up to 18 dBm for 54 Mbps 802.11g Packages available signal 8-contact XSON 2mm x 2mm 17 dBm at 1.8% EVM, 802.11ac, 256 QAM, 2.4 GHz All non-Pb (lead-free) devices are RoHS compliant High power-added efficiency/Low operating cur- rent for 802.11b/g/n applications ~32%/135 mA P = 21.5 dBm for 802.11g OUT ~36%/150 mA P = 22.5 dBm for 802.11b OUT Applications Single-pin low I power-up/down control REF WLAN (IEEE 802.11b/g/n/ac) I <2 mA REF Home RF Low idle current for high-efficiency operation ~50 mA I CQ Cordless phones High-speed power-up/down control 2.4 GHz ISM wireless equipment Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included <200 ns 2012 Silicon Storage Technology, Inc. www.microchip.com DS-75003C 08/12 PROPRIETARY AND CONFIDENTIAL2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP18E A Microchip Technology Company Data Sheet Product Description The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech- nology. The SST12LP18E is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE 802.11b/g/n/ac applications. It typically provides 25 dB gain with 32% power-added efficiency (PAE) POUT = 21.5 dBm for 802.11g and 36% PAE POUT = 22.5 dBm for 802.11b. The SST12LP18E has excellent linearity, typically ~3% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dBm. SST12LP18E can also be configured for high-linearity with EVM <1.8% at typically 17 dBm for 802.11ac operation. The SST12LP18E also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) makes REF the SST12LP18E controllable by an on/off switching signal directly from the baseband chip. These fea- tures, coupled with low operating current, make the SST12LP18E ideal for the final stage power ampli- fication in battery-powered 802.11b/g/n/ac WLAN transmitter applications. The SST12LP18E has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linear operation. The excellent on-chip power detector is both temperature and VSWR insensitive therefore, it provides a reliable solution to board-level power control. The SST12LP18E is offered in 8-contact XSON package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2012 Silicon Storage Technology, Inc. DS-75003C 08/12 2 PROPRIETARY AND CONFIDENTIAL