Product Datasheet January 21, 2002 18-27 GHz 1W Power Amplifier TGA1135B-SCC Key Features 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V 480 mA On-chip power detector diode Primary Applications Chip Dimensions 2.641 mm x 1.480 mm Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com Product Description The TriQuint TGA1135B-SCC is a balanced two- TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA stage HPA MMIC design using TriQuints proven 18 0.25 um Power pHEMT process. The 16 TGA11135B is designed to support a variety of 14 millimeter wave applications including point-to- 12 point digital radio and LMDS/LMCS. 10 8 The balanced configuration two stage design 6 consists of a pair of 600um input devices driving a 4 2 4 x 600um output stage. Power combining is 0 achieved with on-chip Lange couplers. -2 -4 The TGA1135B-SCC provides 29 dBm nominal -6 output power at 1dB compression across 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 18 - 27GHz. Typical small signal gain is 14 dB Frequency (GHz) across the band. Input and output return loss is TGA1135B Nominal Output Power typically -15dB. Wafer 993150303, Idq=540mA 32 An on-chip power detector and reference diode 31.5 VD = 7V may be used for power monitoring/control and 31 bias control loops. 30.5 30 VD = 6V The TGA1135B-SCC requires minimum off-chip 29.5 components. Each device is 100% DC and RF 29 Note: 1 dB of tested on-wafer to ensure performance compression not reached on some parts 28.5 at 27, 27.5 GHz compliance. The device is available in chip form. 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) 1 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com S21 (dB) P1dB (dBm)Product Datasheet January 21, 2002 TGA1135B-SCC TABLE I MAXIMUM RATINGS SYMBOL PARAMETER 4/ VALUE NOTES + V POSITIVE SUPPLY VOLTAGE 8 V + I POSITIVE SUPPLY CURRENT 720 mA 1/ - I NEGATIVE SUPPLY CURRENT 28.2 mA P INPUT CONTINUOUS WAVE POWER 23 dBm IN P POWER DISSIPATION 5.0 W D 0 T OPERATING CHANNEL TEMPERATURE 150 C2/ 3/ CH 0 T MOUNTING TEMPERATURE 320 C M (30 SECONDS) 0 T STORAGE TEMPERATURE -65 to 150 C STG 1/ Total current for all stages. 2/ These ratings apply to each individual FET. 3/ Junction operating temperature will directly affect the device median time to failure (T ). For maximum life, M it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ These ratings represent the maximum operable values for the device. TABLE II DC SPECIFICATIONS (100%) = 25 C + 5 C) (T A NOTES SYMBOL TEST CONDITIONS 2/ LIMITS UNITS MAX MIN 282 I STD 60 mA DSS1 318 G STD 132 mS M1 1.5 1/ V STD 0.5 V P1 1.5 1/ V STD 0.5 V P2 1.5 1/ V STD 0.5 V P3-6 30 1/ V STD 13 V BVGD1 30 1/ V STD 13 V BVGS1 1/ V , V , and V are negative. P BVGD BVGS 2/ The measurement conditions are subject to change at the manufactures discretion (with appropriate notification to the buyer). 2 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com