TGA2521-SM 17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dBm Nominal Psat, 23.5 dBm Nominal P1dB Gain: 20 dB OTOI: 33 dBm Typical Bias: Vd = 5 V, Idq = 320 mA, Vg = -0.5 V Typical Package Dimensions: 4 x 4 x 0.85 mm Measured Performance Primary Applications Point-to-Point Radio Bias conditions: Vd = 5 V, Id = 320 mA, Vg = -0.5 V Typical Point-to-Multipoint Communications 25 30 Product Description 20 15 The TriQuint TGA2521-SM is a three stage HPA S21 MMIC design using TriQuints proven 0.25 um 15 0 S11 Power pHEMT process. The TGA2521-SM is S22 designed to support a variety of millimeter wave applications including point-to-point digital radio 10 -15 and other K band linear gain applications. The TGA2521-SM provides 23.5 dBm nominal 5 -30 output power at 1dB compression across 17- 17 18 19 20 21 22 23 24 24GHz. Typical small signal gain is 20 dB at Freq (GHz) 17GHz and 20dB at 23GHz. 40 The TGA2521-SM requires minimum off-chip components. Each device is DC and RF tested for 35 key parameters. The device is available in a 4x4mm plastic QFN package. 30 Lead-free and RoHS compliant. 25 P1dB (dBm) 20 Psat (dBm) Output TOI (dBm) 15 17 18 19 20 21 22 23 24 Freq (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com Nov 2014 Rev F Pout (dBm) or OTOI (dBm) S21 (dB) S11 and S22 (dB) TGA2521-SM Table I Absolute Maximum Ratings 1/ Symbol Parameter Value Notes Vd-Vg Drain to Gate Voltage 11 V Vd1, Vd2 Drain Voltage 8 V 2/ Vg1, Vg2 Gate Voltage Range -5 to 0 V Id1 Drain Current 115 mA 2/ Id2 Drain Current 407 mA 2/ Ig1 Gate Current Range 8 mA Ig2 Gate Current Range 34 mA Pin Input Continuous Wave Power 23 dBm 2/ Tchannel Channel Temperature 200 C 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Parameter 1/ Value Vd1, Vd2 Drain Voltage 5 V Id1+Id2 Drain Current 320 mA Id Drive Drain Current under RF Drive TBD mA Vg1 Gate 1 Voltage -0.5 V Vg2 Gate 2 Voltage -0.5 V 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw tqs.com Nov 2014 Rev F