X-On Electronics has gained recognition as a prominent supplier of TGA2567-SM RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2567-SM RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2567-SM Qorvo

TGA2567-SM electronic component of Qorvo
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Part No.TGA2567-SM
Manufacturer: Qorvo
Category: RF Amplifier
Description: TriQuint (Qorvo) RF Amplifier 2-20GHz Gain 17dB NF 2dB pHEMT
Datasheet: TGA2567-SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 166.5893 ea
Line Total: USD 166.59 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 166.5893
25 : USD 112.2608
100 : USD 88.3692
250 : USD 72.431
500 : USD 70.2562
1000 : USD 69.5831

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Brand
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA2567-SM from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2567-SM and other electronic components in the RF Amplifier category and beyond.

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TGA2567-SM 220GHz LNA Amplifier Product Description Qorvos TGA2567-SM is a LNA Gain Block fabricated on Qorvos proven 0.15um pHEMT production process. The TGA2567-SM operates from 2 to 20 GHz and typically provides 19 dBm of 1dB compressed output power with 17 dB of small signal gain. Greater than 16 dB of adjustable gain can be achieved by varying VG2. The Noise Figure is typically 2 dB at mid band. The TGA2567-SM is available in a low-cost, surface mount QFN 4x4 mm 24L 24 lead 4x4 AIN QFN package base with an Air cavity LCP lid. TGA2567-SM is ideally suited to support both commercial and defense related applications. Functional Block Diagram Product Features Frequency Range: 220 GHz PSAT: 22 dBm P : 19 dBm 1dB 21 TGA2567-SM Small Signal Gain: 17 dB Adjustable Gain Range (using V ) G2 Noise Figure: 2 dB RF IN RF OUT 5 16 OIP3: 29 dBm Bias: VD = 5 V, ID = 100 mA, VG1 = -0.7 V typical, V = +1.3 V G2 ESD Protection Circuitry on VD, VG1 and VG2 11 23 Package dimensions: 4.00 x 4.00 x 1.42 mm Applications General Purpose LNA/Gain Block Point to Point Radio Ordering Information Electronic Warfare Military & Commercial Radar Part No. Description Communications TGA2567-SM 220GHz LNA / Gain Block TGA2567-SMEVB TGA2567-SM Evaluation Board, Qty 1 Data Sheet Rev. B, October 2019 Subject to change without notice - 1 of 11 - www.qorvo.com TGA2567-SM 220GHz LNA Amplifier Absolute Maximum Ratings Parameter Min Value Max Value Units Drain Voltage (V ) - 6 V D Drain to Gate Voltage (VD-VG1) - 8 V Gate Voltage Range (V ) 2 1 V G1 Gate Voltage Range (VG2) 2 4 V Drain Current (I ) - 160 mA D Gate Current Range (IG1, IG2) -1 40 mA Power Dissipation (P ) - 2.8 W DISS RF Input Power, CW, 50 , T =25 C - 22 dBm Channel Temperature (T ) - 200 C CH Mounting Temperature (30 Seconds) - 260 C Storage Temperature 55 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Value/Range Units Drain Voltage (VD) 5 V Drain Current (I ) 100 mA DQ Gate Voltage (VG1), typical, can be adjusted to get IDQ -0.7 V Gate Voltage (V ), can be adjusted for gain control +1.3 V G2 Operating Temperature Range (TBASE) 40 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 20 GHz Small Signal Gain 17 dB Input Return Loss 15 dB Output Return Loss 14 dB Noise Figure: 2 GHz 2.8 dB Output TOI 29 dBm Output Power (Saturation P = 10 dBm) 22 dBm IN Output Power (1 dB Compression) 19 dBm Small Signal Gain Temperature Coefficient -0.013 dB/C Noise Figure Temperature Coefficient 0.009 dB/C Test conditions unless otherwise noted: 25C, VD = +5V, IDQ = 100mA, VG1 = 0.7V Typical, VG2 = 1.3V Data are de-embedded to package. Data Sheet Rev. B, October 2019 Subject to change without notice - 2 of 11 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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