TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier General Description Qorvos TGA2583-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2583-SM is designed using Qorvos production 0.25 m GaN on SiC process (QGaN25). The TGA2583-SM typically provides 41.4 dBm of saturated output power, > 50% power-added efficiency, and 33 dB small signal gain. It can operate under both pulse and CW conditions. Air Cavity Package The TGA2583-SM is available in a low-cost, surface mount Product Features 32 lead 5 x 5 AIN QFN. It is ideally suited to support both commercial and defense related radar applications. Frequency Range: 2.73.7 GHz P : 41.4 dBm SAT Both RF ports have integrated DC blocking capacitors and PAE: > 50 % are fully matched to 50 ohms. Small Signal Gain: 33 dB Return Loss: > 12 dB Lead-free and RoHS compliant Bias: VD = 2532 V (CW or Pulsed), IDQ = 175 mA Pulsed VD: PW = 100 us, DC = 10 % Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram Applications 32 31 30 29 28 27 26 25 Commercial and Military Radar 1 24 2 23 RF OUT 3 22 RF IN 4 21 5 20 6 19 7 18 8 17 9 10 11 12 13 14 15 16 Ordering Information Part Description TGA2583-SM 2.73.7 GHz, 10 W GaN Power Amplifier TGA2583-SM EVB Evaluation Board Data Sheet Rev F, April 2020 Subject to change without notice 1 of 13 www.qorvo.com TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 2532 V D Drain Voltage (VD) 40 V Drain Current (I ) 175350 mA DQ Gate Voltage Range (VG) 8 to 0 V Drain Current Under RF Drive (ID DRIVE) See plots pg. 6 Drain Current (ID) 1530 mA Gate Voltage Range (VG) 2.8 to 2.0 V Gate Current (IG) 5.4 to 11.5 mA Gate Current Under RF Drive (IG DRIVE) See plots p. 7 Power Dissipation (PDISS), 85 C 27 W Input Power (P ), CW, 50 , 85 C 30 dBm IN Electrical specifications are measured at specified test Input Power (P ), CW, V 10:1, IN SWR conditions. Specifications are not guaranteed over all 23 dBm VD = 28 V, 85 C recommended operating conditions. Mounting Temperature (30 Seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 28 V, I = 175 mA, Pulsed V : PW = 100 us, DC = 10 % D DQ D Parameter Min Typical Max Units Operational Frequency Range 2.7 3.7 GHz Small Signal Gain (CW) >33 dB Input Return Loss (CW) >16 dB Output Return Loss (CW) >11 dB Output Power at Saturation (P = 16 dBm) 40.5 41.6 dBm IN Power-Added Efficiency (P = 16 dBm) 50 54 % IN Gate Leakage (V = 10 V, V = 3.7 V) 5.98 0.0001 mA D G Gain Temperature Coefficient 0.05 dB/C Power Temperature Coefficient 0.005 dBm/C Data Sheet Rev F, April 2020 Subject to change without notice 2 of 13 www.qorvo.com