X-On Electronics has gained recognition as a prominent supplier of TGA2583-SM RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2583-SM RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2583-SM Qorvo

TGA2583-SM electronic component of Qorvo
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Part No.TGA2583-SM
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 2.7-3.7GHz 10W Gain 33dB GaN
Datasheet: TGA2583-SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 203.112 ea
Line Total: USD 203.11 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 203.112
25 : USD 183.75

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
NF - Noise Figure
Pd - Power Dissipation
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGA2583-SM from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2583-SM and other electronic components in the RF Amplifier category and beyond.

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TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier General Description Qorvos TGA2583-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2583-SM is designed using Qorvos production 0.25 m GaN on SiC process (QGaN25). The TGA2583-SM typically provides 41.4 dBm of saturated output power, > 50% power-added efficiency, and 33 dB small signal gain. It can operate under both pulse and CW conditions. Air Cavity Package The TGA2583-SM is available in a low-cost, surface mount Product Features 32 lead 5 x 5 AIN QFN. It is ideally suited to support both commercial and defense related radar applications. Frequency Range: 2.73.7 GHz P : 41.4 dBm SAT Both RF ports have integrated DC blocking capacitors and PAE: > 50 % are fully matched to 50 ohms. Small Signal Gain: 33 dB Return Loss: > 12 dB Lead-free and RoHS compliant Bias: VD = 2532 V (CW or Pulsed), IDQ = 175 mA Pulsed VD: PW = 100 us, DC = 10 % Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram Applications 32 31 30 29 28 27 26 25 Commercial and Military Radar 1 24 2 23 RF OUT 3 22 RF IN 4 21 5 20 6 19 7 18 8 17 9 10 11 12 13 14 15 16 Ordering Information Part Description TGA2583-SM 2.73.7 GHz, 10 W GaN Power Amplifier TGA2583-SM EVB Evaluation Board Data Sheet Rev F, April 2020 Subject to change without notice 1 of 13 www.qorvo.com TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 2532 V D Drain Voltage (VD) 40 V Drain Current (I ) 175350 mA DQ Gate Voltage Range (VG) 8 to 0 V Drain Current Under RF Drive (ID DRIVE) See plots pg. 6 Drain Current (ID) 1530 mA Gate Voltage Range (VG) 2.8 to 2.0 V Gate Current (IG) 5.4 to 11.5 mA Gate Current Under RF Drive (IG DRIVE) See plots p. 7 Power Dissipation (PDISS), 85 C 27 W Input Power (P ), CW, 50 , 85 C 30 dBm IN Electrical specifications are measured at specified test Input Power (P ), CW, V 10:1, IN SWR conditions. Specifications are not guaranteed over all 23 dBm VD = 28 V, 85 C recommended operating conditions. Mounting Temperature (30 Seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, V = 28 V, I = 175 mA, Pulsed V : PW = 100 us, DC = 10 % D DQ D Parameter Min Typical Max Units Operational Frequency Range 2.7 3.7 GHz Small Signal Gain (CW) >33 dB Input Return Loss (CW) >16 dB Output Return Loss (CW) >11 dB Output Power at Saturation (P = 16 dBm) 40.5 41.6 dBm IN Power-Added Efficiency (P = 16 dBm) 50 54 % IN Gate Leakage (V = 10 V, V = 3.7 V) 5.98 0.0001 mA D G Gain Temperature Coefficient 0.05 dB/C Power Temperature Coefficient 0.005 dBm/C Data Sheet Rev F, April 2020 Subject to change without notice 2 of 13 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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