TGA2620-SM 16 18GHz Driver Amplifier Applications Commercial and Military Radar Communications QFN 3x3 mm 14L Product Features Functional Block Diagram Frequency Range: 16 18GHz 12 11 14 13 P : 18.5dBm SAT P1dB: 16.5dBm Small Signal Gain: 20dB 1 10 Input Return Loss: 16dB Output Return Loss: 25dB Bias: V = 6V, I = 30mA, V = -0.6V Typical 9 2 D DQ G Package Dimensions: 3 x 3 x 0.53 mm 8 3 5 6 7 4 General Description Pad Configuration TriQuints TGA2620-SM is a package Ku-band MMIC Pad No. Symbol driver amplifier fabricated on TriQuints 0.15um GaAs 1, 3, 8, 10 GND pHEMT production process. Operating from 16-18GHz, 2 RF In the TGA2620-SM provides more than 18.5dBm 4 - 7, 11, 14 N/C saturated output power, 16.5dBm P1dB and 20dB small 9 RF Out signal gain. 12 V D 13 V G Fully matched to 50 ohms with integrated DC blocking capacitors on both I/O ports allows for simple system integration. The TGA2620-SM is an ideal choice for general purpose amplification across both commercial and military Ku-band platforms. The TGA2620-SM is available in a low cost, surface mount, 14-lead 3x3mm AIN QFN package base with air cavity Liquid Crystal Polymer (LCP) lid. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part ECCN Description TGA2620-SM EAR99 16 18GHz Driver Amplifier Preliminary Datasheet: Rev - 07-25-14 Disclaimer: Subject to change without notice - 1 of 14 - 2014 TriQuint www.triquint.com TGA2620-SM 16 18GHz Driver Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain Voltage (V ) 6.5V Drain Voltage (V ) 6V D D Gate Voltage Range (V ) -2 to 0V Drain Current (I ) 30mA G DQ Drain Current (I ) 65mA Gate Voltage (V ) -0.6V Typical D G Gate Current (I ) -0.5 to 5mA Electrical specifications are measured at specified test G conditions. Specifications are not guaranteed overall operating Power Dissipation, 85C (P ) 0.3W DISS conditions. Input Power, CW, 50 , (P ) 15dBm IN Channel temperature (T ) 150C CH Mounting Temperature 260C (30 Seconds) Storage Temperature -55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, V = 6V, I = 30mA, V = -0.6V Typical D DQ G Parameter Min Typical Max Units Operational Frequency Range 16 18 GHz Small Signal Gain 20 dB Input Return Loss 16 dB Output Return Loss 25 dB Output Power (PSAT) 18.5 dBm Output Power at 1 dB Gain Compression 16.5 dBm Power Added Efficiency (PSAT) 24 % Gain Temperature Coefficient -0.02 dB/C Preliminary Datasheet: Rev - 07-25-14 Disclaimer: Subject to change without notice - 2 of 14 - 2014 TriQuint www.triquint.com