TGA3503-SM 2-30 GHz GaAs Wideband Gain Block Applications General Purpose Wideband Gain Block Electronic Warfare Military & Commercial Radar Military Communications Commercial Communications Instrumentation Product Features Functional Block Diagram Frequency Range: 2 30 GHz 32 31 30 29 28 27 26 25 Small Signal Gain: 10 dB typical Return Loss: 12 dB typical NF: 4.0 dB mid-band P1dB: 19 dBm, PSAT = 19 dBm at PIN = 10 dBm OTOI: > 25 dBm at Pout/tone = 8 dBm + Bias: V = 10.4 V, IDQ = 135 mA, VCTRL = 2.2 V, V = -1 V Typical G 33 Package Dimensions: 5 x 5 x 1.5 mm 9 10 11 12 13 14 15 16 General Description Pad Configuration TriQuints TGA3503-SM is a wideband gain block with Pad No. Symbol adjustable gain control giving the user extra flexibility to 1-4, 6-13, 15-21, 23-27, 29, 31-32 Gnd fine tune system performance. Operating from 2 to 5 RF IN 30GHz, the TGA3503-SM provides 19dBm P1dB and 10dB of small-signal gain with return losses of greater 14 VG than 12dB. 22 RF OUT + 28 V The TGA3503-SM is fabricated on TriQuints production 30 V or V CTRL G2 TQPHT15 0.15um GaAs pHEMT process and is offered in a robust, 5x5mm ceramic air-cavity QFN. With 33 Gnd integrated DC blocking caps and fully match to 50ohms, the TGA3503-SM is easily integrated in both commercial and military system architectures. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part ECCN Description 2 30 GHz GaAs TGA3503-SM EAR99 Wideband Gain Block Preliminary Datasheet: Rev - 09-08-14 Disclaimer: Subject to change without notice - 1 of 12 - 2014 TriQuint www.triquint.com TGA3503-SM 2-30 GHz GaAs Wideband Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Value (1) Parameter Value + + Bias Voltage (V ) 10.4 V Supply Voltage (V ) 10.4 V Drain Voltage (V ) 6 V (2) Drain Voltage (V ) 5 V D D Gate Voltage Range (V ) -3 to 0 V G Drain Current (IDQ) 135 mA Control Voltage Range (VCTRL) -3 to 3 V Gate Voltage (VG) -1 V Typical Drain Current (I ) 150 mA D Gain Control Voltage (V ) 2.2 V CTRL Gate Current (IG) -2 to 10 mA Temperature (T ) -40 to 85 C BASE Power Dissipation, 85 C (P ) 1.4 W DISS Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all operating conditions. Input Power, CW, 50 , (P ) 21 dBm IN Channel temperature (TCH) 200 C Mounting Temperature 260 C (30 Seconds) Storage Temperature -55 to 150 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. + 2. Assure VD VCTRL 8 V. Compute VD = V - IDQ*40 Electrical Specifications 0 + Test conditions unless otherwise noted: 25 C, V = 10.4 V, IDQ = 135 mA, VCTRL = 2.2 V, VG = -1 V Typical, CW Parameter Min Typical Max Units Operational Frequency Range 2 30 GHz Small Signal Gain 10 dB Input Return Loss 12 dB Output Return Loss 12 dB Noise Figure (at mid-band) 4 dB Output Power at 1 dB Gain Compression 19 dBm Output TOI at Pout/tone = 8 dBm > 25 dBm Gain Temperature Coefficient -0.01 dB/C Preliminary Datasheet: Rev - 09-08-14 Disclaimer: Subject to change without notice - 2 of 12 - 2014 TriQuint www.triquint.com